Product Standards
Transistors with Built-in Resistor
DRA2L14Y0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
Operating ambient temperature Topr -40 to
Parameter
1.
2.
3.
Parameter Symbol Rating Unit
Code
Base
TO-236AA/SOT-23
Panasonic
Packaging
Mini3-G3-B
JEITA
Embossed type (Thermo-compression sealing) : 3
SC-59A
000
DRA2L14Y0L
Silicon PNP epitaxial planar type
For digital circuits
Features
Marking Symbol:
K4
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Emitter
pcs / reel (standard)
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE
Unit: mm
R2 47
k
R1 10
Collector
1of3
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Collector-base voltage (Emitter open) VCBO -30 V
Internal Connection
Resistance
value
+85 °C
k
+150 °C
Collector current IC -100 mA
Collector-emitter voltage (Base open) VCEO -30 V
Junction temperature Tj 150 °C
Total power dissipation PT 200 mW
V
Symbol Conditions Max UnitMin Typ
Storage temperature Tstg -55 to
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -30
Collector-base voltage (Emitter open) VCBO IC = -10 μA, IE = 0 -30
V
Collector-base cutoff current (Emitter open)
ICBO VCB = -30 V, IE = 0 -0.1 μA
μA
Emitter-base cutoff current (Collector open)
IEBO VEB = -3 V, IC = 0 -0.1 mA
Collector-emitter cutoff current (Base open)
ICEO
Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 80
-0.5 VCE = -30 V, IB = 0
-
Collector-emitter saturation voltage VCE(sat) IC = -50 mA, IB = -0.33 mA -0.6 -1.2 V
Input voltage
Vi(on) VCE = -0.2 V, IC = -5 mA
Vi(off) VCE = -5 V, IC = -100 μA -0.5 V
-1.5 V
Input resistance R1 -30% 10 +30%
k
Resistance ratio R1/R2 0.16
0.213
0.27 -
C
B
R
1
R
2
E
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
