Characteristics STPS3150
2/9 Doc ID 9474 Rev 6
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.59 x I
F(AV)
+ 0.027 I
F
2
(RMS)
Table 2. Absolute Ratings (limiting values at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 150
V
I
F(AV)
Average forward current,
δ = 0.5 square wave
SMB T
L
= 130 °C
3
A
DO-201AD T
L
= 140 °C
SMB flat T
L
= 150 °C
I
FSM
Surge non repetitive
forward current
SMB
t
p
= 10 ms sinusoidal
80
A
DO-201AD 100
SMB flat 80
P
ARM
(1)
1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the STMicroelectronics Application
notes AN1768, “Admissible avalanche power of Schottky diodes” and AN2025, “Converter improvement
using Schottky rectifier avalanche specification”.
Repetitive peak avalanche power T
j
= 125 °C, t
p
= 10 µs 210 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Operating junction temperature
(2)
2. condition to avoid thermal runaway for a diode on its own heatsink
175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
SMB flat 10
°C/WSMB 20
Lead length = 10 mm DO-201AD 15
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ Max. Unit
I
R
(1)
1. t
p
= 5 ms, δ < 2%
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
0.4 2.0 µA
T
j
= 125 °C 0.6 2.0 mA
V
F
(2)
2. t
p
= 380 µs, δ < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 3 A
0.78 0.82
V
T
j
= 125 °C 0.63 0.67
T
j
= 25 °C
I
F
= 6 A
0.85 0.89
T
j
= 125 °C 0.70 0.75
dPtot
dTj
---------------
1
Rth j a–()
--------------------------
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