DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 9: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM
DRAM Operating Conditions
PDF: 09005aef83aa7149
kdf18c512x72pz.pdf - Rev. G 4/13 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 10: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision D)
Values are for the MT41K512M4 DDR3L SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4)
component data sheet
Parameter Symbol 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1530 1350 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
1800 1710 mA
Precharge power-down current: Slow exit I
DD2P0
216 216 mA
Precharge power-down current: Fast exit I
DD2P1
540 450 mA
Precharge quiet standby current I
DD2Q
630 540 mA
Precharge standby current I
DD2N
666 576 mA
Precharge standby ODT current I
DD2NT
810 720 mA
Active power-down current I
DD3P
630 540 mA
Active standby current I
DD3N
720 630 mA
Burst read operating current I
DD4R
2610 2250 mA
Burst write operating current I
DD4W
2790 2430 mA
Refresh current I
DD5B
3600 3420 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
216 216 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
270 270 mA
All banks interleaved read current I
DD7
6930 6030 mA
Reset current I
DD8
252 252 mA
4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM
I
DD
Specifications
PDF: 09005aef83aa7149
kdf18c512x72pz.pdf - Rev. G 4/13 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 11: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision M)
Values are for the MT41K512M4 DDR3L SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1080 990 900 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
1350 1260 1170 mA
Precharge power-down current: Slow exit I
DD2P0
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
594 504 414 mA
Precharge quiet standby current I
DD2Q
594 504 414 mA
Precharge standby current I
DD2N
630 540 450 mA
Precharge standby ODT current I
DD2NT
720 630 540 mA
Active power-down current I
DD3P
846 756 666 mA
Active standby current I
DD3N
936 846 756 mA
Burst read operating current I
DD4R
2250 1980 1710 mA
Burst write operating current I
DD4W
2070 1800 1530 mA
Refresh current I
DD5B
3420 3330 3240 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
216 216 216 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
270 270 270 mA
All banks interleaved read current I
DD7
3960 3690 3420 mA
Reset current I
DD8
252 252 252 mA
4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM
I
DD
Specifications
PDF: 09005aef83aa7149
kdf18c512x72pz.pdf - Rev. G 4/13 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.

MT18KDF51272PZ-1G4M1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 240RDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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