Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
MUN2136T1
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
MUN21
1
1T1 Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Ty
p
Max
Unit
ON CHARACTERISTICS
(Note 6) (Continued)
Output V
oltage (off) (V
CC
= 5.0 V
, V
B
= 0.5 V
, R
L
= 1.0 k
Ω
)
(V
CC
= 5.0 V
, V
B
= 0.050 V
, R
L
= 1.0 k
Ω
)
MUN2130T1
(V
CC
= 5.0 V
, V
B
= 0.25 V
, R
L
= 1.0 k
Ω
)
MUN21
15T1
MUN21
16T1
MUN2131T1
MUN2132T1
MUN2140T1
V
OH
4.9
–
–
Vdc
Input Resistor
MUN21
1
1T1
MUN21
12T1
MUN21
13T1
MUN21
14T1
MUN21
15T1
MUN21
16T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
32.9
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
61.1
61.1
k
Ω
Resistor Ratio
MUN21
1
1T1/MUN21
12T1/MUN21
13T1/
MUN2136T1
MUN21
14T1
MUN21
15T1/MUN21
16T1/MUN2140T1
MUN2130T1/MUN2131T1/MUN2132T1
MUN2133T1
MUN2134T1
MUN2137T1
R
1
/R
2
0.8
0.17
–
0.8
0.055
0.38
1.7
1.0
0.21
–
1.0
0.1
0.47
2.1
1.2
0.25
–
1.2
0.185
0.56
2.6
6.
Pulse T
est: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
Figure 1. Derating Curve
350
200
150
100
50
0
–50
0
50
100
150
T
A
, AMBIENT TEMPERA
TURE (5
°
C)
P
D,
POWER DISSIP
A
TION (mW)
R
θ
JA
= 370
°
C/W
250
300
LOAD
+12 V
Figure 2. Inexpensive, Unregulated Current Source
T
ypical Application
for PNP BRT
s
MUN21
1
1T1 Series
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS – MUN21
1
1T1
I
C
, COLLECTOR CURRENT (mA)
100
10
1
0.1
0.01
0.001
V
in,
INPUT VOL
T
AGE (VOL
TS)
I
C,
COLLECTOR CURRENT (mA)
h
FE,
DC CURRENT GAIN
Figure 3. V
CE(sat)
vs. I
C
0
T
A
= –25
°
C
25
°
C
12
3
4
5
678
9
1
0
Figure 4. DC Current Gain
Figure 5. Output Capacitance
Figure 6. Output Current vs. Input V
oltage
Figure 7. Input V
oltage vs. Output Current
0.01
20
0.1
1
04
0
6
0
8
0
1000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
100
10
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10
20
30
40
50
T
A
= –25
°
C
75
°
C
75
°
C
50
01
0
2
0
3
0
4
0
4
3
1
2
V
R
, REVERSE BIAS VOL
T
AGE (VOL
TS)
0
T
A
=–
2
°
5C
25
°
C
75
°
C
25
°
C
V
CE
= 10 V
V
O
= 5 V
V
in
, INPUT VOL
T
AGE (VOL
TS)
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
–25
°
C
V
CE(sat),
MAXIMUM COLLECT
OR VOL
T
AGE
(VOL
TS)
C
ob,
CAP
ACIT
ANCE (pF)
T
A
=7
5
°
C
I
C
/I
B
= 10
25
°
C
V
O
= 0.2 V
MUN21
1
1T1 Series
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS – MUN21
12T1
V
in,
INPUT VOL
T
AGE (VOL
TS)
I
C,
COLLECTOR CURRENT (mA)
C
ob,
CAP
ACIT
ANCE (pF)
h
FE,
DC CURRENT GAIN
V
CE(sat),
MAXIMUM COLLECT
OR VOL
T
AGE
(VOL
TS)
T
A
= –25
°
C
Figure 8. V
CE(sat)
vs. I
C
Figure 9. DC Current Gain
1000
10
I
C
, COLLECTOR CURRENT (mA)
100
10
1
10
0
T
A
=7
5
°
C
Figure 10. Output Capacitance
I
C
, COLLECTOR CURRENT (mA)
01
0
2
0
3
0
75
°
C
100
10
1
0.1
40
50
Figure 1
1. Output Current vs. Input V
oltage
100
10
1
0.1
0.01
0.001
0
12
3
4
V
in
, INPUT VOL
T
AGE (VOL
TS)
25
°
C
567
8
9
1
0
Figure 12. Input V
oltage vs. Output Current
0.01
0.1
1
10
40
I
C
, COLLECTOR CURRENT (mA)
02
0
6
0
8
0
75
°
C
25
°
C
T
A
= –25
°
C
50
01
0
2
0
3
0
4
0
4
3
2
1
0
V
R
, REVERSE BIAS VOL
T
AGE (VOL
TS)
25
°
C
V
CE
= 10 V
I
C
/I
B
= 10
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
V
O
= 5 V
25
°
C
75
°
C
–25
°
C
T
A
= –25
°
C
V
O
= 0.2 V
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
MUN2136T1
Mfr. #:
Buy MUN2136T1
Manufacturer:
ON Semiconductor
Description:
TRANS PREBIAS PNP 230MW SC59
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
MUN2133T1
MUN2132T1
MUN2130T1
MUN2137T1
MUN2111T3
MUN2134T1
MUN2111T1
MUN2136T1