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NSR05T40P2T5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 2
1 Publication Order Number:
NSR05T40P2/D
NSR05T40P2
500 mA, 40 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in spacing saving
micro−packaging ideal for space constraint applications.
Features
• Low Forward Voltage Drop − 580 mV (Typ.) @ I
F
= 500 mA
• Low Reverse Current − 2.0 mA (Typ.) @ V
R
= 40 V
• 500 mA of Continuous Forward Current
• ESD Rating: − Human Body Model: Class 3B
− Charged Device Model: Class IV
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
40 V
Forward Current (DC) I
F
500 mA
Forward Surge Current
(60 Hz @ 1 cycle)
I
FSM
3.0 A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
I
FRM
1.0 A
ESD Rating: Human Body Model
Charged Device Model
ESD > 8
> 1
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
CATHODE
2
ANODE
www.onsemi.com
Device Package Shipping†
ORDERING INFORMATION
NSR05T40P2T5G SOD−923
(Pb−Free)
2 mm Pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SOD−923
CASE 514AB
MARKING
DIAGRAM
1
2
YKM
YK = Specific Device Code
M = Date Code
NSR05T40P2
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
345
360
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
175
715
°C/W
mW
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Figure 1. Thermal Response (Note 1)
0.000001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
1
10
100
1000
R(t) (C/W)
PULSE TIME (sec)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
0.00001
Figure 2. Thermal Response (Note 2)
0.000001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
1
10
100
1000
R(t) (C/W)
PULSE TIME (sec)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
0.00001
NSR05T40P2
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Leakage
(V
R
= 10 V)
(V
R
= 40 V)
I
R
0.2
2.0
5.0
55
mA
Forward Voltage
(I
F
= 10 mA)
(I
F
= 100 mA)
(I
F
= 200 mA)
(I
F
= 500 mA)
V
F
360
450
490
580
410
500
550
700
mV
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
29 pF
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R(REC)
= 1.0 mA, Figure 3)
t
rr
8.0 ns
Peak Forward Recovery Voltage
(I
F
= 100 mA, t
r
= 20 ns, Figure 4)
V
FRM
560 mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820 W
0.1 mF
D.U.T.
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 3. Recovery Time Equivalent Test Circuit
Figure 4. Peak Forward Recovery Voltage Definition
t
r
Time
V
F
V
FRM
I
F
Time
V
F
P1-P3P4-P5

NSR05T40P2T5G

Mfr. #:
Buy NSR05T40P2T5G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 0.5 A 40 V Schottky
Lifecycle:
New from this manufacturer.
Delivery:
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