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BCW70LT1

P1-P3P4-P6
BCW70LT1
http://onsemi.com
4
TYPICAL STATIC CHARACTERISTICS
Figure 6. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
1.4
Figure 7. Collector Characteristics
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20
50
1.6
100
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
*q
VC
for V
CE(sat)
q
VB
for V
BE
0.1 0.2 0.5
Figure 8. “On” Voltages
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS
)
0.002
T
A
= 25°C
I
C
= 1.0 mA 10 mA 100 mA
Figure 9. Temperature Coefficients
50 mA
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
60
80
100
20
0
0
I
C
, COLLECTOR CURRENT (mA)
T
A
= 25°C
PULSE WIDTH = 300 ms
DUTY CYCLE ≤ 2.0%
I
B
= 400 mA
350 mA
300 mA
250 mA
200 mA
*APPLIES for I
C
/I
B
≤ h
FE
/2
25°C to 125°C
−55°C to 25°C
25°C to 125°C
−55°C to 25°C
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40
1.2
1.0
0.8
0.6
0.4
0.2
0
2.4
0.8
0
1.6
0.8
1.0 2.0 5.0 10 20
50
100
0.1 0.2 0.5
V
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
150 mA
100 mA
50 mA
Figure 10. Turn−On Time
I
C
, COLLECTOR CURRENT (mA)
500
Figure 11. Turn−Off Time
I
C
, COLLECTOR CURRENT (mA)
2.0 5.0 10
20 30 50
1000
3.01.0
t, TIME (ns)
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
300
7.0
70 100
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
t
d
@ V
BE(off)
= 0.5 V
t
r
10
20
30
50
70
100
200
300
500
700
− 2.0
−1.0
V
CC
= − 3.0 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
s
t
f
200
− 3.0
− 5.0 − 7.0
− 20
−10
− 30
− 50 − 70
−100
BCW70LT1
http://onsemi.com
5
TYPICAL DYNAMIC CHARACTERISTICS
C, CAPACITANCE (pF)
Figure 12. Current−Gain — Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
Figure 13. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
500
0.5
10
f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz
)
T
50
70
100
200
300
0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
T
J
= 25°C
V
CE
= 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05
C
ib
C
ob
T
J
= 25°C
Figure 14. Thermal Response
t, TIME (ms)
1.0
0.01
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k
50k
10
0
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN−569)
Z
q
JA(t)
= r(t) w R
q
JA
T
J(pk)
− T
A
= P
(pk)
Z
q
JA(t)
t
1
t
2
P
(pk)
FIGURE 16
T
J
, JUNCTION TEMPERATURE (°C)
10
4
−4
0
I
C
, COLLECTOR CURRENT (nA)
Figure 15. Typical Collector Leakage Current
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 16. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 14 was calculated for various duty cycles.
To find Z
q
JA(t)
, multiply the value obtained from Figure 14 by the
steady state value R
q
JA
.
Example:
Dissipating 2.0 watts peak under the following conditions:
t
1
= 1.0 ms, t
2
= 5.0 ms (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading
of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P
(pk)
x R
q
JA
= 0.22 x 2.0 x 200 = 88°C.
For more information, see AN−569.
10
−2
10
−1
10
0
10
1
10
2
10
3
−2
0
0 + 20 + 40 + 60 + 80 + 100 +120 + 140 + 160
V
CC
= 30 V
I
CEO
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 V
BCW70LT1
http://onsemi.com
6
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
ǒ
mm
inches
Ǔ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
q
e
E
E
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
2.10 2.40 2.64 0.083 0.094 0.104
H
E
0.35 0.54 0.69 0.014 0.021 0.029
c
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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BCW70LT1/D
LITERATURE FULFILLMENT:
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P1-P3P4-P6

BCW70LT1

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Bipolar Transistors - BJT 100mA 50V PNP
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