Characteristics STPS30L60C
2/13 Doc ID 6479 Rev 10
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode2) x R
th(c)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 60 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current
TO-220AB narrow leads,
TO-220AB, I
2
PAK, D
2
PAK ,
TO-247, δ = 0.5
T
c
= 130 °C
Per diode
Per device
15
30
A
TO-220FPAB, δ = 0.5
T
c
= 110 °C
Per diode
Per device
15
30
I
FSM
Surge non repetitive forward current t
p
= 10 ms, sinusoidal 230 A
I
RRM
Repetitive peak reverse current
t
p
= 2 µs square, F = 1
kHz
2A
P
ARM
(1)
Repetitive peak avalanche power
t
p
= 1 µs, T
j
= 25 °C
7800 W
V
ARM
(2)
Maximum repetitive peak avalanche voltage
t
p
< 1 µs, T
j
< 150 °C,
I
AR
< 29 A
80 V
V
ASM
(2)
Maximum single pulse peak avalanche voltage
t
p
< 1 µs, T
j
< 150 °C,
I
AR
< 29 A
80 V
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(3)
150 °C
dV/dt Critical rate of rise reverse voltage 10000 V/µs
1. For temperature or pulse time duration deratings, refer to Figure 4 and Figure 5. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 12.
3. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
<
1
Rth(j-a)
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AB narrow leads,
TO-220AB, I
2
PAK, D
2
PAK, TO-247
Per diode 1.5
°C/W
Total 0.8
TO-220FPAB
Per diode 4.7
Total 3.95
R
th(c)
Coupling
TO-220AB narrow leads, TO-220AB, I
2
PAK,
D
2
PAK, TO-247
0.1
TO-220FPAB 3.2
