MAC12HCM

© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 5
1 Publication Order Number:
MAC12HC/D
MAC12HCDG, MAC12HCMG,
MAC12HCNG
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever full−wave,
silicon gate−controlled devices are needed.
Features
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
High Commutating di/dt and High Immunity to dv/dt @ 125°C
Minimizes Snubber Networks for Protection
Blocking Voltage to 800 Volts
On-State Current Rating of 12 Amperes RMS at 80°C
High Surge Current Capability − 100 Amperes
Industry Standard TO-220AB Package for Ease of Design
Glass Passivated Junctions for Reliability and Uniformity
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1)
(T
J
= −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC12HCDG
MAC12HCMG
MAC12HCNG
V
DRM,
V
RRM
400
600
800
V
On-State RMS Current
(All Conduction Angles; T
C
= 80°C)
I
T(RMS)
12 A
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, T
J
= 125°C)
I
TSM
100 A
Circuit Fusing Consideration (t = 8.33 ms) I
2
t 41 A
2
sec
Peak Gate Power
(Pulse Width 1.0 ms, T
C
= 80°C)
P
GM
16 W
Average Gate Power
(t = 8.3 ms, T
C
= 80°C)
P
G(AV)
0.35 W
Operating Junction Temperature Range T
J
40 to +125 °C
Storage Temperature Range T
stg
40 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TRIACS
12 AMPERES RMS
400 thru 800 VOLTS
TO−220
CASE 221A
STYLE 4
1
www.onsemi.com
MAC12HCxG
AYWW
MARKING
DIAGRAM
x = D, M, or N
A = Assembly Location (Optional)*
Y = Year
WW = Work Week
G = Pb−Free Package
2
3
Device Package Shipping
ORDERING INFORMATION
MAC12HCDG TO−220
(Pb−Free)
50 Units / Rail
MAC12HCNG TO−220
(Pb−Free)
50 Units / Rail
MAC12HCMG TO−220
(Pb−Free)
50 Units / Rail
MT1
G
MT2
PIN ASSIGNMENT
1
2
3 Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
* The Assembly Location code (A) is optional. In
cases where the Assembly Location is stamped
on the package the assembly code may be blank.
MAC12HCDG, MAC12HCMG, MAC12HCNG
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Case
Junction−to−Ambient
R
q
JC
R
q
JA
2.2
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
, Gate Open) T
J
= 25°C
T
J
= 125°C
I
DRM
, I
RRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I
TM
= ± 17 A)
V
TM
1.85
V
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
I
GT
10
10
10
50
50
50
mA
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current = ±150 mA)
I
H
60
mA
Latch Current (V
D
= 12 V, I
G
= 50 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
I
L
60
80
60
mA
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
V
GT
0.5
0.5
0.5
1.5
1.5
1.5
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(V
D
= 400 V, I
TM
= 4.4 A, Commutating dv/dt = 18 V/ms, Gate Open,
T
J
= 125°C, f = 250 Hz, C
L
= 10 mF, L
L
= 40 mH, with Snubber)
(di/dt)
c
15 A/ms
Critical Rate of Rise of Off-State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform,
Gate Open, T
J
= 125°C)
dv/dt 600
V/ms
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 msec; diG/dt = 200 mA/msec; f = 60 Hz
di/dt 10
A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
MAC12HCDG, MAC12HCMG, MAC12HCNG
www.onsemi.com
3
+ Current
+ Voltage
V
TM
I
H
Symbol Parameter
V
DRM
Peak Repetitive Forward Off State Voltage
I
DRM
Peak Forward Blocking Current
V
RRM
Peak Repetitive Reverse Off State Voltage
I
RRM
Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
I
DRM
at V
DRM
on state
off state
I
RRM
at V
RRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 −
V
TM
I
H
V
TM
Maximum On State Voltage
I
H
Holding Current
MT1
(+) I
GT
GATE
(+) MT2
REF
MT1
(−) I
GT
GATE
(+) MT2
REF
MT1
(+) I
GT
GATE
(−) MT2
REF
MT1
(−) I
GT
GATE
(−) MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
I
GT
+ I
GT
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.

MAC12HCM

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Triacs THY 12A 600V TRIAC
Lifecycle:
New from this manufacturer.
Delivery:
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