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SE80PWBHM3/I

P1-P3P4-P5
SE80PWB, SE80PWD, SE80PWG, SE80PWJ
www.vishay.com
Vishay General Semiconductor
Revision: 07-Jun-17
1
Document Number: 87508
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface-Mount ESD Capability Rectifier
FEATURES
• Very low profile - typical height of 1.3 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop
• ESD capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose, power line polarity protection, in both
industry and automotive applications.
MECHANICAL DATA
Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Notes
(1)
With infinite heatsink
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
8 A
V
RRM
100 V, 200 V, 400 V, 600 V
I
FSM
110 A
V
F
at I
F
= 8 A (T
A
= 125 °C) 0.92 V
T
J
max. 175 °C
Package SlimDPAK (TO-252AE)
Circuit configuration Single
SlimDPAK (TO-252AE)
eSMP
®
Series
1
2
K
PIN 1
K
HEATSINK
PIN 2
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SE80PWB SE80PWD SE80PWG SE80PWJ UNIT
Device marking code SE80PWB SE80PWD SE80PWG SE80PWJ
Maximum repetitive peak reverse voltage V
RRM
100 200 400 600 V
Maximum average forward rectified current (Fig. 1)
I
F(AV)
(1)
8.0
A
I
F(AV)
(2)
3.5
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
110 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +175 °C
SE80PWB, SE80PWD, SE80PWG, SE80PWJ
www.vishay.com
Vishay General Semiconductor
Revision: 07-Jun-17
2
Document Number: 87508
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width ≤ 40 ms
Notes
(1)
The heat generated must be less than thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
θJA
(2)
Free air, mounted on recommended copper pad area; thermal resistance R
θJA
- junction to ambient
(3)
Mounted on infinite heat sink; thermal resistance R
θJM
- junction-to-mount
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum Instantaneous forward voltage
I
F
= 4.0 A
T
A
= 25 °C
V
F
(1)
0.93 -
V
I
F
= 8.0 A 1.10 1.12
I
F
= 4.0 A
T
A
= 125 °C
0.82 -
I
F
= 8.0 A 0.92 1.07
Reverse current Rated V
R
T
A
= 25 °C
I
R
(2)
-15
μA
T
A
= 125 °C 19 150
Typical reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
2400 - ns
Typical junction capacitance 4.0 V, 1 MHz C
J
58 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SE80PWB SE80PWD SE80PWG SE80PWJ UNIT
Typical thermal resistance
R
θJA
(1)(2)
60
°C/W
R
θJM
(3)
2.2
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(T
A
= 25 °C unless otherwise noted)
STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE
AEC-Q101-001 Human body model (contact mode) C = 100 pF, R = 1.5 kΩ V
C
H3B > 8 kV
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SE80PWJ-M3/I 0.20 I 4500 13" diameter plastic tape and reel
SE80PWJHM3/I
(1)
0.20 I 4500 13" diameter plastic tape and reel
SE80PWB, SE80PWD, SE80PWG, SE80PWJ
www.vishay.com
Vishay General Semiconductor
Revision: 07-Jun-17
3
Document Number: 87508
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0255075100125150175
Average Forward Rectied Current (A)
Mount Temperature (°C)
T
M
= 157 °C, R
thJM
= 2.2 °C/W
T
A
= 25 °C, R
thJA
= 60 °C/W
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0123456789
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
0.01
0.1
1
10
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 100 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 75 °C
T
J
= - 40 °C
0.001
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (˩A)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 150 °
C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °
C
T
J
= 75 °C
T
J
= 175 °C
T
J
= -40 °C
1
10
100
1000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Junction to Ambient
P1-P3P4-P5

SE80PWBHM3/I

Mfr. #:
Buy SE80PWBHM3/I
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 8A, 100V, SlimDPAK AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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