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15ETX06-1

P1-P3P4-P6P7-P7
Document Number: 93928 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 08-Sep-08 1
Hyperfast Rectifier,
15 A FRED Pt
TM
15ETX06S/15ETX06-1
Vishay High Power Products
FEATURES
• Benchmark ultralow forward voltage drop
• Hyperfast recovery time
• Low leakage current
• 175 °C operating junction temperature
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
t
rr
18 ns
I
F(AV)
15 A
V
R
600 V
15ETX06S
Anode
1
3
Base
Cathode
2
N/C
D
2
PAK
15ETX06-1
TO-262
Anode
1
3
2
N/C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 133 °C 15
ANon-repetitive peak surge current I
FSM
T
J
= 25 °C 170
Peak repetitive forward current I
FM
30
Operating junction and storage temperatures T
J
, T
Stg
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 µA 600 - -
V
Forward voltage V
F
I
F
= 15 A - 2.3 3.2
I
F
= 15 A, T
J
= 150 °C - 1.5 1.8
Reverse leakage current I
R
V
R
= V
R
rated - 0.1 50
µA
T
J
= 150 °C, V
R
= V
R
rated - 40 300
Junction capacitance C
T
V
R
= 600 V - 20 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93928
2 Revision: 08-Sep-08
15ETX06S/15ETX06-1
Vishay High Power Products
Hyperfast Rectifier,
15 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/µs, V
R
= 30 V - 18 22
ns
I
F
= 15 A, dI
F
/dt = 100 A/µs, V
R
= 30 V - 20 32
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/µs
V
R
= 390 V
-22-
T
J
= 125 °C - 52 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.4 -
A
T
J
= 125 °C - 5.1 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 25 -
nC
T
J
= 125 °C - 150 -
Reverse recovery time t
rr
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/µs
V
R
= 390 V
-37-ns
Peak recovery current I
RRM
-16- A
Reverse recovery charge Q
rr
-350- nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
-1.01.3
°C/W
Thermal resistance,
junction to ambient per leg
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth
and greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style D
2
PAK 15ETX06S
Case style TO-262 15ETX06-1
Document Number: 93928 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 08-Sep-08 3
15ETX06S/15ETX06-1
Hyperfast Rectifier,
15 A FRED Pt
TM
Vishay High Power Products
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
100
0
0.5
2.51.5
1
3
3.5 4
2
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500 600
0.0001
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= 25 °C
0
100 200 300 500 600400
1000
100
10
1
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P1-P3P4-P6P7-P7

15ETX06-1

Mfr. #:
Buy 15ETX06-1
Manufacturer:
Vishay
Description:
DIODE GEN PURP 600V 15A TO262
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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