Product Standards
MOS FET
MTM761100LBF
Electrical Characteristics Ta = 25 C 3 C
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1
Pulse test : Pulse width 300 s, Duty cycle 2 %
*2 Measurement circuit for Turn-on Time / Turn-off Time
Page
Note：
-0.3
ID = -0.5 A, VGS = -2.5 V
Gate-source Threshold Voltage Vth
ID = -1.0 mA, VDS = -6.0 V
RDS(ON)2
RDS(ON)1
Drain-source On-state Resistance
*1
A
Gate-source Leakage Current IGSS
VGS =
6.4 V, VDS = 0 V
Zero Gate Voltage Drain Current IDSS
10
Unit
Drain-source Breakdown Voltage VDSS
ID = -1 mA, VGS = 0 V -12
V
Min Typ Max
-1.0
Parameter Symbol Conditions
VDS = -12 V, VGS = 0 V
62of
-1.0
Forward transfer admittance
*1
Output Capacitance Coss
|Yfs|
Input Capacitance Ciss
ID = -1 A, VGS = -4.0 V
35
-0.65
110
ton 30
3.5
300
A
ns
ns
S
pF
V
1200
110
CrssReverse Transfer Capacitance
Turn-off Time
*2
toff
Turn-on Time
*2
m
ID = -1 A
VDD = -6 V, VGS = 0 to -4 V
ID = -1 A
VDD = -6 V, VGS = -4 to 0 V
55
VDS = -10 V, VGS = 0 V
f = 1 MHz
ID = -1 A, VDS = -10 V, f = 1 kHz
30 42
45 75
RDS(ON)3
ID = -0.2 A, VGS = -1.8 V
