EDF1AS, EDF1BS, EDF1CS, EDF1DS
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
1
Document Number: 88578
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Miniature Glass Passivated Ultrafast
Surface Mount Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for automated placement
• Glass passivated pellet chip junction
• Ultrafast reverse recovery time for high
frequency
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: DFS
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Note
(1)
Pulse test: 300 ms pulse width, 1 % duty cycle
Note
(1)
Pulse test: 300 ms pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
Package DFS
I
F(AV)
1 A
V
RRM
50 V, 100 V, 150 V, 200 V
I
FSM
50 A
I
R
5 μA
V
F
at I
F
= 1.0 A 1.05 V
t
rr
50 ns
T
J
max. 150 °C
Diode variations Quad
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS UNIT
Maximum repetitive peak reverse voltage V
RRM
50 100 150 200 V
Maximum RMS voltage V
RMS
35 70 106 140 V
Maximum DC blocking voltage V
DC
50 100 150 200 V
Maximum average forward output rectified current at T
A
= 40 °C
(1)
I
F(AV)
1.0 A
Peak forward surge current single half sine-wave superimposed on rated load I
FSM
50 A
Rating for fusing (t < 8.3 ms) I
2
t10A
2
s
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS UNIT
Maximum instantaneous forward voltage
drop per diode
1.0 A
(1)
V
F
1.05 V
Maximum DC reverse current at rated DC
blocking voltage per diode
T
A
= 25 °C
I
R
5.0 μA
T
A
= 125 °C 1.0 mA
Maximum reverse recovery time per diode I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
50 ns
