VS-30BQ060PBF

Document Number: 94180 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 04-Mar-10 1
Schottky Rectifier, 3.0 A
VS-30BQ060PbF
Vishay High Power Products
FEATURES
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant to RoHS directive 2002/95/EC
Designed and qualified for industrial level
DESCRIPTION
The VS-30BQ060PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
I
F(AV)
3.0 A
V
R
60 V
Cathode Anode
SMC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 3.0 A
V
RRM
60 V
I
FSM
t
p
= 5 μs sine 1200 A
V
F
3.0 Apk, T
J
= 125 °C 0.52 V
T
J
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30BQ060PbF UNITS
Maximum DC reverse voltage V
R
60 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
50 % duty cycle at T
L
= 123 °C, rectangular waveform 3.0
A
50 % duty cycle at T
L
= 113 °C, rectangular waveform 4.0
Maximum peak one cycle
non-repetitive surge current
at T
C
= 25 °C
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
1200
10 ms sine or 6 ms rect. pulse 130
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.0 A, L = 10 mH 5.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.0 A
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94180
2 Revision: 04-Mar-10
VS-30BQ060PbF
Vishay High Power Products
Schottky Rectifier, 3.0 A
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2)
Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
3 A
T
J
= 25 °C
0.58
V
6 A 0.76
3 A
T
J
= 125 °C
0.52
6 A 0.66
Maximum reverse leakage current I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.5
mA
T
J
= 125 °C 20
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to1 MHz), 25 °C 180 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 3.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
(1)
- 55 to 150 °C
Maximum storage temperature range T
Stg
Maximum thermal resistance,
junction to lead
R
thJL
(2)
DC operation
12
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
46
Approximate weight
0.24 g
0.008 oz.
Marking device Case style SMC (similar to DO-214AB) V3H
dP
tot
dT
J
-------------
1
R
thJA
--------------<
Document Number: 94180 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 04-Mar-10 3
VS-30BQ060PbF
Schottky Rectifier, 3.0 A
Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
0.1
1
10
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.1
0.3 0.6 0.8 0.90.70.40.2 0.5
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
0.01
0.1
1
10
100
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
10 30 6040200
50
T
J
= 125 °C
T
J
= 150 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
10 30 60
70
40200
50
T
J
= 25 °C
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
100
Single pulse
thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C

VS-30BQ060PBF

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-30BQ060-M39AT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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