PBSS5230T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 4 June 2012 2 of 10
NXP Semiconductors
PBSS5230T
30 V, 2 A PNP low VCEsat (BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
[1] % = placeholder for manufacturing site code
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 B base
SOT23 (TO-236AB)
2Eemitter
3 C collector
Table 3. Ordering information
Type number Package
Name Description Version
PBSS5230T TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
PBSS5230T %3G
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - -30 V
V
CEO
collector-emitter voltage open base - -30 V
V
EBO
emitter-base voltage open collector - -5 V
I
C
collector current - -2 A
I
CM
peak collector current single pulse; t
p
≤ 1ms - -3 A
I
B
base current - -300 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 300 mW
[2]
- 480 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -65 150 °C
T
stg
storage temperature -65 150 °C
