1998-2012 Microchip Technology Inc. DS20067K-page 7
93AA46/56/66
2.7 Write
The WRITE instruction is followed by 16 bits (or by 8
bits) of data which are written into the specified
address. After the last data bit is put on the DI pin,
CS must be brought low before the next rising edge
of the CLK clock. This falling edge of CS initiates the
self-timed auto-erase and programming cycle.
The DO pin indicates the Ready/Busy
status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL) and before the entire write cycle is complete.
DO at logical “0” indicates that programming is still in
progress. DO at logical “1” indicates that the register at
the specified address has been written with the data
specified and the device is ready for another
instruction.
The write cycle takes 4 ms per word typical.
2.8 Erase All (ERAL)
The ERAL instruction will erase the entire memory array
to the logical “1” state. The ERAL cycle is identical to
the erase cycle except for the different opcode. The
ERAL cycle is completely self-timed and commences
at the falling edge of the CS. Clocking of the CLK pin is
not necessary after the device has entered the Self
Clocking mode. The ERAL instruction is ensured at 5V
10%.
The DO pin indicates the Ready/Busy
status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL) and before the entire write cycle is complete.
The ERAL cycle takes (8 ms typical).
2.9 Write All (WRAL)
The WRAL instruction will write the entire memory array
with the data specified in the command. The WRAL
cycle is completely self-timed and commences at the
falling edge of the CS. Clocking of the CLK pin is not
necessary after the device has entered the Self Clock-
ing mode. The WRAL command does include an auto-
matic ERAL cycle for the device. Therefore, the WRAL
instruction does not require an ERAL instruction but the
chip must be in the EWEN status. The WRAL instruction
is ensured at 5V 10%.
The DO pin indicates the Ready/Busy
status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL).
The WRAL cycle takes 16 ms typical.
FIGURE 2-1: SYNCHRONOUS DATA TIMING
CS
CLK
DI
DO
(Read)
DO
(Program)
V
IH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
VOH
VOL
TCSS
TDIS
TSV
TCSH
TCKLTCKH
TDIH
TPD
TPD
TCZ
TCZ
Status Valid
93AA46/56/66
DS20067K-page 8 1998-2012 Microchip Technology Inc.
FIGURE 2-2: READ TIMING
FIGURE 2-3: EWEN TIMING
FIGURE 2-4: EWDS TIMING
TCSL
CS
CLK
DI
DO
Tri-state
1
10
A
n
A0
0Dx D0Dx D0
Dx D0
TCSL
1
1
0
CS
CLK
DI
01
X
X
TCSL
1
0
0
CS
CLK
DI
0
0
X
X
1998-2012 Microchip Technology Inc. DS20067K-page 9
93AA46/56/66
FIGURE 2-5: WRITE TIMING
FIGURE 2-6: WRAL TIMING
FIGURE 2-7: ERASE TIMING
11
0
A
n
A0
CS
CLK
DI
DO
TCSL
D0
Dx
Tri-state
TWC
Busy
Ready
Ensured at Vcc = +4.5V to +6.0V.
1
X0
CS
CLK
DI
DO
TCSL
D0
Dx
Tri-state
TWL
Busy
Ready
Standby
0
0
X
Tri-state
1
An-11
CS
CLK
DI
TCSL
A0
An-2
Standby
1
DO
Tri-state
TWC
Busy
Ready
An
Check Status
Tri-state
TSV
TCZ

93AA46-I/SN

Mfr. #:
Manufacturer:
Microchip Technology
Description:
EEPROM 128x8-64x16 - 1.8V
Lifecycle:
New from this manufacturer.
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