1998-2012 Microchip Technology Inc. DS20067K-page 1
93AA46/56/66
Features:
Single supply with programming operation down
to 1.8V
Low-power CMOS technology:
-70 A typical active read current at 1.8V
-2 A typical standby current at 1.8V
ORG pin selectable memory configuration:
- 128 x 8- or 64 x 16-bit organization (93AA46)
- 256 x 8- or 128 x 16-bit organization
(93AA56)
- 512 x 8 or 256 x 16-bit organization (93AA66)
Self-timed erase and write cycles
(including auto-erase)
Automatic ERAL before WRAL
Power on/off data protection circuitry
Industry standard 3-wire serial I/O
Device status signal during erase/write cycles
Sequential read function
1,000,000 E/W cycles ensured
Data retention > 200 years
8-pin PDIP/SOIC
(SOIC in JEDEC and EIAJ standards)
Temperature ranges supported:
Description:
The Microchip Technology Inc. 93AA46/56/66 are 1K,
2K and 4K low voltage serial Electrically Erasable
PROMs. The device memory is configured as x8 or x16
bits depending on the ORG pin setup. Advanced
CMOS technology makes these devices ideal for low
power nonvolatile memory applications. The 93AA
Series is available in standard 8-pin PDIP and surface
mount SOIC packages. The rotated pin-out 93AA46X/
56X/66X are offered in the “SN” package only.
Package Types
Block Diagram
- Commercial (C): 0°C to +70°C
- Industrial (I): -40°C to +85°C
1
2
3
4
8
7
6
5
CS
CLK
DI
DO
SS
V
NU
ORG
V
CC
1
2
3
4
8
7
6
5
SS
V
NU
ORG
V
CC
CS
CLK
DI
DO
1
2
3
4
8
7
6
5
ORG
Vss
DO
DI
NU
Vcc
CS
CLK
PDIP
SOIC
SOIC
93AA46
93AA56
93AA66
93AA46
93AA56
93AA66
93AA46X
93AA56X
93AA66X
Memory
Array
Address
Decoder
Address
Counter
Output
Buffer
Data
Register
Mode
Decode
Logic
Clock
Generator
V
CC VSS
DO
DI
ORG
CS
CLK
1K/2K/4K 1.8V Microwire Serial EEPROM
Not recommended for new designs –
Please use 93AA46C, 93AA56C or
93AA66C.
93AA46/56/66
DS20067K-page 2 1998-2012 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
VCC.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V
SS ......................................................................................................... -0.6V to VCC +1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied................................................................................................-40°C to +125°C
Soldering temperature of leads (10 seconds) .......................................................................................................+300°C
ESD protection on all pins..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
1998-2012 Microchip Technology Inc. DS20067K-page 3
93AA46/56/66
TABLE 1-1: DC AND AC ELECTRICAL CHARACTERISTICS
VCC = +1.8V to +5.5V Commercial (C): TA = 0°C to +70°C
Industrial (I): T
A = -40°C to +85°C
Parameter Symbol Min Typ Max Units Conditions
High-level input voltage V
IH12.0 VCC+1 V VCC 2.7V
V
IH20.7 VCC —VCC+1 V VCC < 2.7V
Low-level input voltage VIL1 -0.3 0.8 V VCC 2.7V
VIL2 -0.3 0.2 VCC VVCC < 2.7V
Low-level output voltage V
OL1— 0.4 VIOL = 2.1 mA; VCC = 4.5V
VOL2— 0.2 VIOL = 100A; VCC = 1.8V
High-level output voltage VOH12.4 VIOH = -400 A; VCC = 4.5V
V
OH2VCC-0.2 V IOH = -100 A; VCC = 1.8V
Input leakage current ILI -10 10 AVIN = 0.1V to VCC
Output leakage current ILO -10 10 AVOUT = 0.1V to VCC
Pin capacitance
(all inputs/outputs)
CIN, COUT —— 7 pFVIN/VOUT = 0V (Note 1 & 2)
T
A = +25°C, FCLK = 1 MHz
Operating current ICC write 3 mA FCLK = 2 MHz; VCC=5.5V
(Note 2)
I
CC read
70
1
500
mA
A
A
FCLK = 2 MHz; VCC = 5.5V
F
CLK = 1 MHz; VCC = 3.0V
F
CLK = 1 MHz; VCC = 1.8V
Standby current ICCS
2
100
30
A
A
A
CLK = CS = 0V; VCC = 5.5V
CLK = CS = 0V; V
CC = 3.0V
CLK = CS = 0V; V
CC = 1.8V
ORG, DI = V
SS or VCC
Clock frequency FCLK 2
1
MHz
MHz
VCC 4.5V
V
CC < 4.5V
Clock high time TCKH 250 ns
Clock low time TCKL 250 ns
Chip select setup time T
CSS 50 ns Relative to CLK
Chip select hold time TCSH 0 ns Relative to CLK
Chip select low time TCSL 250 ns
Data input setup time T
DIS 100 ns Relative to CLK
Data input hold time TDIH 100 ns Relative to CLK
Data output delay time T
PD
400 ns
CL = 100 pF
Data output disable time TCZ 100 ns
CL = 100 pF (Note 2)
Status valid time TSV 500 ns
CL = 100 pF
Program cycle time TWC 410ms
Erase/Write mode
TEC 815ms
ERAL mode (Vcc = 5V 10%)
TWL 16 30 ms
WRAL mode (Vcc = 5V 10%)
Endurance 1M 1M 25°C, Vcc = 5.0V, Block mode
(Note 3)
Note 1: This parameter is tested at T
A = 25C and FCLK = 1 MHz.
2: This parameter is periodically sampled and not 100% tested.
3: This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model which can be obtained from Microchip’s web site.

93AA46/SN

Mfr. #:
Manufacturer:
Microchip Technology
Description:
EEPROM 128x8-64x16 1.8V
Lifecycle:
New from this manufacturer.
Delivery:
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