FDPF15N65YDTU Datasheet FDPF15N65YDTU | P1-P3

November 2013

FDPF15N65 — N-Channel UniFET

TM

MOSFET

FDPF15N65 Rev. C1

www.fairchildsemi.com

1

FDPF15N65

N-Channel UniFET

TM

MOSFET

650 V, 15 A, 440 mΩ

Features

•R

DS(on)

= 360 mΩ (Typ.) @ V

GS

= 10 V, I

D

= 7.5 A

• Low Gate Charge (Typ. 48.5 nC)

• Low C

rss

(Typ. 23.6 pF)

• 100% Avalanche Tested

Applications

• LCD/LED/PDP TV and Monitor

• Uninterruptible Power Supply

Description

UniFET

TM

MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. This device family is suitable for switching

power converter applications such as power factor correction

(PFC), flat panel display (FPD) TV power, ATX and electronic

lamp ballasts.

TO-220F

G

D

S

G

S

D

Absolute Maximum Ratings T

C

= 25°C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDPF15N65 Unit

V

DSS

Drain-Source Voltage 650 V

I

D

Drain Current - Continuous (T

C

= 25°C)

- Continuous (T

C

= 100°C)

15*

9.5*

A

I

DM

Drain Current - Pulsed

(Note 1)

60*

A

V

GSS

Gate-Source voltage ± 30 V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

637 mJ

I

AR

Avalanche Current

(Note 1)

15 A

E

AR

Repetitive Avalanche Energy

(Note 1)

25.0 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

P

D

Power Dissipation (T

C

= 25°C)

- Derate Above 25°C

38.5

0.3

W

W/°C

T

J,

T

STG

Operating and Storage Temperature Range -55 to +150 °C

T

L

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C

Symbol Parameter FDPF15N65 Unit

R

θJC

Thermal Resistance, Junction-to-Case, Max. 3.3

°C/W

R

θJA

Thermal Resistance, Junction-to-Ambient, Max. 62.5

* Drain current limited by maximum junction termperature.

FDPF15N65 — N-Channel UniFET

TM

MOSFET

FDPF15N65 Rev. C1

www.fairchildsemi.com

2

Package Marking and Ordering Information

Electrical Characteristics T

C

= 25°C unless otherwise noted.

Notes:

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. L = 5.23 mH, I

AS

= 15 A, V

DD

= 50 V, R

G

= 25 Ω, starting T

J

= 25°C.

3. I

SD

≤ 15 A, di/dt ≤ 200 A/μs, V

DD

≤ BV

DSS

, starting T

J

= 25°C.

4. Essentially independent of operating temperature typical characteristics.

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FDPF15N65

FDPF15N65 TO-220F Tube N/A N/A 50 units

Symbol Parameter Conditions Min. Typ. Max. Unit

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage V

GS

= 0 V, I

D

= 250 μA, T

J

= 25°C 650 -- -- V

ΔBV

DSS

/ ΔT

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250 μA, Referenced to 25°C--0.65--V/°C

I

DSS

Zero Gate Voltage Drain Current V

DS

= 650 V, V

GS

= 0 V

V

DS

= 520 V, T

C

= 125°C

--

1

10

μA

I

GSSF

Gate-Body Leakage Current, Forward V

GS

= 30 V, V

DS

= 0 V -- -- 100 nA

I

GSSR

Gate-Body Leakage Current, Reverse V

GS

= -30 V, V

DS

= 0 V -- -- -100 nA

On Characteristics

V

GS(th)

Gate Threshold Voltage V

DS

= V

GS

, I

D

= 250 μA3.0--5.0V

R

DS(on)

Static Drain-Source

On-Resistance

V

GS

= 10 V, I

D

= 7.5 A -- 0.36 0.44 Ω

g

FS

Forward Transconductance V

DS

= 40 V, I

D

= 7.5 A -- 19.2 -- S

Dynamic Characteristics

C

iss

Input Capacitance V

DS

= 25 V, V

GS

= 0 V,

f = 1 MHz

-- 2380 3095 pF

C

oss

Output Capacitance -- 295 385 pF

C

rss

Reverse Transfer Capacitance -- 23.6 35.5 pF

Switching Characteristics

t

d(on)

Turn-On Delay Time V

DD

= 325 V, I

D

= 15 A,

V

GS

= 10 V, R

G

= 21.7 Ω

(Note 4)

-- 65 140 ns

t

r

Turn-On Rise Time -- 125 260 ns

t

d(off)

Turn-Off Delay Time -- 105 220 ns

t

f

Turn-Off Fall Time -- 65 140 ns

Q

g

Total Gate Charge V

DS

= 520 V, I

D

= 15 A,

V

GS

= 10 V

(Note 4)

-- 48.5 63.0 nC

Q

gs

Gate-Source Charge -- 14.0 -- nC

Q

gd

Gate-Drain Charge -- 21.2 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current -- -- 15* A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A

V

SD

Drain-Source Diode Forward Voltage V

GS

= 0 V, I

S

= 15 A -- -- 1.4 V

t

rr

Reverse Recovery Time V

GS

= 0 V, I

S

= 15 A,

dI

F

/dt =100 A/μs

-- 496 -- ns

Q

rr

Reverse Recovery Charge -- 5.69 -- μC

FDPF15N65 — N-Channel UniFET

TM

MOSFET

FDPF15N65 Rev. C1

www.fairchildsemi.com

3

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

24681012

10

0

10

1

150

o

C

25

o

C

-55

o

C

* Notes :

1. V

DS

= 40V

2. 250

μs Pulse Test

I

D

, Drain Current [A]

V

GS

, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25

o

C

I

D

, Drain Current [A]

V

DS

, Drain-Source Voltage [V]

0 1020304050

0.0

0.2

0.4

0.6

0.8

1.0

V

GS

= 20V

V

GS

= 10V

* Note : T

J

= 25

o

C

R

DS(ON)

[Ω],

Drain-Source On-Resistance

I

D

, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10

0

10

1

150

o

C

* Notes :

1. V

GS

= 0V

2. 250

μs Pulse Test

25

o

C

I

DR

, Reverse Drain Current [A]

V

SD

, Source-Drain voltage [V]

0 1020304050

0

2

4

6

8

10

12

V

DS

= 325V

V

DS

= 130V

V

DS

= 520V

* Note : I

D

= 15A

V

GS

, Gate-Source Voltage [V]

Q

G

, Total Gate Charge [nC]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

* Note ;

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitances [pF]

V

DS

, Drain-Source Voltage [V]

FDPF15N65YDTU

FDPF15N65YDTU

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