IRFL9014TRPBF

IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
S14-1686-Rev. F, 18-Aug-14
4
Document Number: 91195
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
91195_07
10
1
10
0
- V
SD
, Source-to-Drain Voltage (V)
- I
SD
, Reverse Drain Current (A)
1.0
5.0
4.03.02.0
25 °C
150 °C
V
GS
= 0 V
6.0
10
-1
91195_08
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
- I
D
, Drain Current (A)
10
2
2
5
2
5
2
5
- V
DS
, Drain-to-Source Voltage (V)
1
10
10
2
25 25 2
5
0.1
1
10
0.1
25
10
3
91195_09
- I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
0.0
0.5
1.0
1.5
2.0
25 1501251007550
V
GS
10 %
90 %
V
DS
t
d(on)
t
r
t
d(off)
t
f
91195_11
0 0.5
0.2
0.1
0.05
0.01
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
0.02
Thermal Response (Z
τηJC
)
1
0.1
10
-2
t
1
, Rectangular Pulse Duration (s)
10
-5
10
-4
10
-3
10
-2
0.1 1 10
10
2
10
10
2
10
3
IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
S14-1686-Rev. F, 18-Aug-14
5
Document Number: 91195
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
R
g
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
- 10 V
Vary t
p
to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
91195_12c
Bottom
To p
I
D
- 0.80 A
- 1.1 A
- 1.8 A
V
DD
= - 25 V
400
0
100
200
300
25 150
125
10075
50
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Q
GS
Q
GD
Q
G
V
G
Charge
- 10 V
D.U.T.
- 3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
S14-1686-Rev. F, 18-Aug-14
6
Document Number: 91195
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91195
.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Body diode forward drop
Body diode forward
current
Driver gate drive
Inductor current
D =
P.W.
Period
+
-
-
-
-
+
+
+
Peak Diode Recovery dV/dt Test Circuit
dV/dt controlled by R
g
D.U.T. - device under test
D.U.T.
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
R
g
Compliment N-Channel of D.U.T. for driver
V
DD
I
SD
controlled by duty factor “D”
Note
Note
a. V
GS
= - 5 V for logic level and - 3 V drive devices
V
GS
= - 10 V
a
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
V
DD
Re-applied
voltage
Ripple 5 %
I
SD
Reverse
recovery
current

IRFL9014TRPBF

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-Chan 60V 1.1 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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