JANSR2N2907AUB

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

RADIATION HARDENED

PNP SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/291

T4-LDS-0055 Rev. 4 (100247) Page 1 of 6

DEVICES LEVELS

2N2906A 2N2907A

JANSM – 3K Rads (Si)

2N2906AL 2N2907AL

JANSD – 10K Rads (Si)

2N2906AUA 2N2907AUA

JANSP – 30K Rads (Si)

2N2906AUB 2N2907AUB

JANSL – 50K Rads (Si)

2N2906AUBC 2N2907AUBC

JANSR – 100K Rads (Si)

ABSOLUTE MAXIMUM RATINGS (T

C

= +25°C unless otherwise noted)

Parameters / Test Conditions Symbol Value Unit

Collector-Emitter Voltage V

CEO

60 Vdc

Collector-Base Voltage V

CBO

60 Vdc

Emitter-Base Voltage V

EBO

5.0 Vdc

Collector Current I

C

600 mAdc

Total Power Dissipation @ T

A

= +25°C P

T

(1)

0.5 W

Operating & Storage Junction Temperature Range T

op

, T

stg

-65 to +200 °C

THERMAL CHARACTERISTICS

Parameters / Test Conditions Symbol Max. Unit

Thermal Resistance, Junction-to-Ambient

R

θJA

(1)

325 °C/W

1. See MIL-PRF-19500/291 for derating curves.

ELECTRICAL CHARACTERISTICS (T

A

= +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I

C

= 10mAdc

V

(BR)CEO

60 Vdc

Collector-Base Cutoff Current

V

CB

= 60Vdc

V

CB

= 50Vdc

I

CBO

10

10

μAdc

ηAdc

Emitter-Base Cutoff Current

V

EB

= 5.0Vdc

V

EB

= 4.0Vdc

I

EBO

10

50

μAdc

ηAdc

Collector-Emitter Cutoff Current

V

CE

= 50Vdc

I

CES

50

ηAdc

TO-18 (TO-206AA)

2N2906A, 2N2907A

4 PIN

2N2906AUA, 2N2907AUA

3 PIN

2N2906AUB, 2N2907AUB

2N2906AUBC, 2N2907AUBC

(UBC = Ceramic Lid Version)

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

T4-LDS-0055 Rev. 4 (100247) Page 2 of 6

ELECTRICAL CHARACTERISTICS (T

A

= +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit

ON CHARACTERISTICS

(2)

Forward-Current Transfer Ratio

I

C

= 0.1mAdc, V

CE

= 10Vdc 2N2906A, L, UA, UB, UBC

2N2907A, L, UA, UB, UBC

40

75

I

C

= 1.0mAdc, V

CE

= 10Vdc 2N2906A, L, UA, UB, UBC

2N2907A, L, UA, UB, UBC

40

100

175

450

I

C

= 10mAdc, V

CE

= 10Vdc 2N2906A, L, UA, UB, UBC

2N2907A, L, UA, UB, UBC

40

100

I

C

= 150mAdc, V

CE

= 10Vdc 2N2906A, L, UA, UB, UBC

2N2907A, L, UA, UB, UBC

40

100

120

300

I

C

= 500mAdc, V

CE

= 10Vdc 2N2906A, L, UA, UB, UBC

2N2907A, L, UA, UB, UBC

h

FE

40

50

Collector-Emitter Saturation Voltage

I

C

= 150mAdc, I

B

= 15mAdc

I

C

= 500mAdc, I

B

= 50mAdc

V

CE(sat)

0.4

1.6

Vdc

Base-Emitter Voltage

I

C

= 150mAdc, I

B

= 15mAdc

I

C

= 500mAdc, I

B

= 50mAdc

V

BE(sat)

0.6

1.3

2.6

Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Small-Signal Short-Circuit Forward Current Transfer Ratio

I

C

= 1.0mAdc, V

CE

= 10Vdc, f = 1.0kHz 2N2906A, L, UA, UB, UBC

2N2907A, L, UA, UB, UBC

h

fe

40

100

Magnitude of Small–Signal Short-Circuit

Forward Current Transfer Ratio

I

C

= 20mAdc, V

CE

= 20Vdc, f = 100MHz

|h

fe

|

2.0

Output Capacitance

V

CB

= 10Vdc, I

E

= 0, 100kHz ≤ f ≤ 1.0MHz

C

obo

8.0 pF

Input Capacitance

V

EB

= 2.0Vdc, I

C

= 0, 100kHz ≤ f ≤ 1.0MHz

C

ibo

30 pF

SWITCHING CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Turn-On Time

See MIL-PRF-19500/291

t

on

45

ηs

Turn-Off Time

See MIL-PRF-19500/291

t

off

300

ηs

(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

T4-LDS-0055 Rev. 4 (100247) Page 3 of 6

PACKAGE DIMENSIONS

NOTES:

Dimensions

1. Dimensions are in inches. Symbol Inches Millimeters Note

2. Millimeters are given for general information only. Min Max Min Max

3. Beyond r (radius) maximum, TW shall be held for a minimum length CD .178 .195 4.52 4.95

of .011 inch (0.28 mm). CH .170 .210 4.32 5.33

4. Dimension TL measured from maximum HD. HD .209 .230 5.31 5.84

5. Body contour optional within zone defined by HD, CD, and Q. LC .100 TP 2.54 TP 6

6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) LD .016 .021 0.41 0.53 7,8

below seating plane shall be within .007 inch (0.18 mm) radius of LL .500 .750 12.70 19.05 7,8,13

true position (TP) at maximum material condition (MMC) relative to LU .016 .019 0.41 0.48 7,8

tab at MMC. L

1

.050 1.27 7,8

7. Dimension LU applies between L

1

and L

2

. Dimension LD applies L

2

.250 6.35 7,8

between L

2

and LL minimum. Diameter is uncontrolled in L

1

and P .100 2.54

beyond LL minimum. Q .030 0.76 5

8. All three leads. TL .028 .048 0.71 1.22 3,4

9. The collector shall be internally connected to the case. TW .036 .046 0.91 1.17 3

10. Dimension r (radius) applies to both inside corners of tab. r .010 0.25 10

11. In accordance with ASME Y14.5M, diameters are equivalent to φx

α

45° TP 45° TP

6

symbology.

12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min.

and 1.75 inches (44.45 mm) max.

FIGURE 1. Physical dimensions (similar to TO-18)

JANSR2N2907AUB

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Manufacturer:

Microchip / Microsemi

Description:

Trans GP BJT PNP 60V 0.6A 3-Pin UB

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