AT-42010 Datasheet AT-42010 | P1-P3

AT-42010

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Data Sheet

Features

• High Output Power:

21.0 dBm Typical P

1 dB

at 2.0 GHz

20.5 dBm Typical P

1 dB

at 4.0 GHz

• High Gain at 1 dB Compression:

14.0 dB Typical G

1 dB

at 2.0 GHz

9.5 dB Typical G

1 dB

at 4.0 GHz

• Low Noise Figure:

1.9 dB Typical NF

O

at 2.0 GHz

• High Gain-Bandwidth Product: 8.0 GHz Typical f

T

• Hermetic Gold-ceramic Microstrip Package

100 mil Package

Description

Avago’s AT-42010 is a general purpose NPN bipolar tran-

sistor that oers excellent high frequency performance.

The AT-42010 is housed in a hermetic, high reliability

100 mil ceramic package. The 4 micron emitter-to-emitter

pitch enables this transistor to be used in many dierent

functions. The 20 emitter nger interdigitated geometry

yields a medium sized transistor with impedances that

are easy to match for low noise and medium power

applications. This device is designed for use in low noise,

wideband amplier, mixer and oscillator applications in

the VHF, UHF, and microwave frequencies. An optimum

noise match near 50Ω up to 1 GHz, makes this device

easy to use as a low noise amplier.

The AT-42010 bipolar transistor is fabricated using Avago’s

10 GHz fT Self-Aligned-Transistor (SAT) process. The die is

nitride passivated for surface protection. Excellent device

uniformity, performance and reliability are produced by

the use of ion-implantation, self-alignment techniques,

and gold metalization in the fabrication of this device.

IFD-53010 pkg

2

AT-42010 Absolute Maximum Ratings

[1]

Absolute

Symbol Parameter Units Maximum

V

EBO

Emitter-Base Voltage V 1.5

V

CBO

Collector-Base Voltage V 20

V

CEO

Collector-Emitter Voltage V 12

I

C

Collector Current mA 80

P

T

Power Dissipation

[2,3]

mW 600

T

j

Junction Temperature °C 200

T

STG

Storage Temperature °C -65 to 200

Thermal Resistance

[2,4]

:

θ

jc

= 150°C/W

Notes:

1. Permanent damage may occur if any of

these limits are exceeded.

2. Tcase = 25°C.

3. Derate at 6.7 mW/°C for Tc > 110°C.

4. The small spot size of this technique results

in a higher, though more accurate determi

-

nation of θjc than do alternate methods.

See MEASUREMENTS section “Thermal Re-

sistance” for more information.

Electrical Specications, T

A

= 25°C

Symbol Parameters and Test Conditions

[1]

Units Min. Typ. Max.

|S

21E

|

2

Insertion Power Gain; V

CE

= 8 V, I

C

= 35 mA f = 2.0 GHz dB 10.5 11.5

f = 4.0 GHz 5.5

P

1 dB

Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 21.0

V

CE

= 8 V, I

C

= 35 mA f= 4.0 GHz 20.5

G

1 dB

1 dB Compressed Gain; V

CE

= 8 V, I

C

= 35 mA f = 2.0 GHz dB 14.0

f = 4.0 GHz 9.5

NF

O

Optimum Noise Figure: V

CE

= 8 V, I

C

= 10 mA f = 2.0 GHz dB 1.9

f = 4.0 GHz 3.0

G

A

Gain @ NF

O

; V

CE

= 8 V, I

C

= 10 mA f = 2.0 GHz dB 13.5

f = 4.0 GHz 10.0

f

T

Gain Bandwidth Product: V

CE

= 8 V, I

C

= 35 mA GHz 8.0

h

FE

Forward Current Transfer Ratio; V

CE

= 8 V, I

C

= 35 mA — 30 150 270

I

CBO

Collector Cuto Current; V

CB

= 8 V µA 0.2

I

EBO

Emitter Cuto Current; V

EB

= 1 V µA 2.0

C

CB

Collector Base Capacitance

[1]

: V

CB

= 8 V, f = 1 MHz pF 0.28

Notes:

1. For this test, the emitter is grounded.

3

AT-42010 Typical Performance, T

A

= 25°C

FREQUENCY (GHz)

Figure 4. Insertion Power Gain, Maximum Available

Gain and Maximum Stable Gain vs. Frequency.

V

CE

= 8 V, I

C

= 35 mA.

GAIN (dB)

0.1 0.50.3 1.0 3.0 6.0

I

C

(mA)

Figure 2. Output Power and 1 dB Compressed Gain vs.

Collector Current and Frequency. V

CE

= 8 V.

24

20

16

12

8

4

G

1 dB

(dB) P

1 dB

(dBm)

0 10 20 30 40 50

P

1dB

G

1dB

2.0 GHz

4.0 GHz

40

35

30

25

20

15

10

5

0

MSG

MAG

|S

21E

|

2

I

C

(mA)

Figure 1. Insertion Power Gain vs. Collector Current

and Frequency. V

CE

= 8 V.

20

16

12

8

4

0

|S

21E

|

2

GAIN (dB)

0 10 20 30 40 50

1.0 GHz

2.0 GHz

4.0 GHz

I

C

(mA)

Figure 3. Output Power and 1 dB Compressed Gain vs.

Collector Current and Voltage. f = 2.0 GHz.

10 V

4 V

6 V

4 V

10 V

6 V

24

20

16

12

16

14

12

10

G

1 dB

(dB) P

1 dB

(dBm)

0 10 20 30 40 50

P

1dB

G

1dB

FREQUENCY (GHz)

Figure 5. Noise Figure and Associated Gain vs.

Frequency. V

CE

= 8 V, I

C

= 10mA.

GAIN (dB)

24

21

18

15

12

9

6

3

0

4

3

2

1

0

NF

O

(dB)

0.5 2.01.0 3.0 4.0 5.0

G

A

NF

O

AT-42010

AT-42010

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