S1PDHM3/85A

S1PB, S1PD, S1PG, S1PJ, S1PK, S1PM
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-16
1
Document Number: 88917
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Glass Passivated Rectifiers
TYPICAL APPLICATIONS
General purpose, polarity protection, and rail-to-rail
protection in both consumer and automotive applications.
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Glass passivated pellet chip junction
Low forward voltage drop
Low thermal resistance
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
I
R
1 μA
V
F
0.95 V
T
J
max. 150 °C
Package DO-220AA (SMP)
Diode variations Single die
DO-220AA (SMP)
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL S1PB S1PD S1PG S1PJ S1PK S1PM UNIT
Device marking code SB SD SG SJ SK SM
Max. repetitive peak reverse voltage V
RRM
100 200 400 600 800 1000 V
Max. RMS voltage V
RMS
70 140 280 420 560 700 V
Max. DC blocking voltage V
DC
100 200 400 600 800 1000 V
Average forward current I
F(AV)
1.0 A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
I
FSM
30 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
S1PB, S1PD, S1PG, S1PJ, S1PK, S1PM
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-16
2
Document Number: 88917
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. R
JL
is
measured at the terminal of cathode band. R
JC
is measured at the top center of the body
Note
(1)
Automotive grade
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 C unless otherwise noted)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL S1PB S1PD S1PG S1PJ S1PK S1PM UNIT
Max. instantaneous
forward voltage
I
F
= 1.0 A T
J
= 25 °C
V
F
(1)
1.1
V
I
F
= 1.0 A T
J
= 125 °C 0.95
Max. reverse current Rated V
R
T
J
= 25 °C
I
R
(2)
1.0 1.0
μA
μA
T
J
= 125 °C 50 100
Typical reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
1.8 μs
Typical junction capacitance time 4.0 V, 1 MHz C
J
6.0 pF
THERMAL CHARACTERISTICS (T
A
= 25 °c unless otherwise noted)
PARAMETER SYMBOL S1PB S1PD S1PG S1PJ S1PK S1PM UNIT
Typical thermal resistance
R
JA
(1)
105
°C/W R
JL
(1)
15
R
JC
(1)
20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
S1PJ-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel
S1PJ-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel
S1PJHM3/84A
(1)
0.024 84A 3000 7" diameter plastic tape and reel
S1PJHM3/85A
(1)
0.024 85A 10 000 13" diameter plastic tape and reel
0
1.2
80 90 100 110 120 130 140 150
Average Forward Rectied Current (A)
Lead Temperature (°C)
0.8
1.0
0.2
0.4
0.6
T
L
Measured
at the Cathode Band Terminal
1.2
1.0
0.8
0.6
0.4
0.2
0
1.21.0
0.8
0.60.4
0.2
0
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current
Average Power Loss (W)
D = t
p
/T t
p
T
S1PB, S1PD, S1PG, S1PJ, S1PK, S1PM
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-16
3
Document Number: 88917
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Max. Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Junction Capacitance
Fig. 7 - Typical Transient Thermal Impedance
Peak Forward Surge Current (A)
Number of Cycles at 50 Hz
1
10
100
10
20
30
0
5
15
25
0.4 0.6 0.8 1.2 1.4
Instantaneous Forward Voltage (V)
0.1
10
1
100
Instantaneous Forward Current (A)
0.01
1.8 2.01.0 1.6
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
20 40 60 80 100
0.1
1
10
100
10 30 50 70 90
0.01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
1
10
100
0.01 101 100
1
10
100
0.1
1000
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)

S1PDHM3/85A

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 200volt 1.0amp
Lifecycle:
New from this manufacturer.
Delivery:
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