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DB3X209K0L

P1-P3P4-P5
Product Standards
Schottky Barrier Diode
DB3X209K0L
Cathode
Absolute Maximum Ratings Ta = 25 C
Note: *1
50 Hz sine wave 1 cycle (Non-repetitive peak current)
Page
20
500
°C
Internal Connection
Unit
V
mA
+85 °C
Repctitive peak reverse voltage
Forward current (Average)
VRRM
IF(AV)
Junction temperature Tj 125
A
4S
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Marking Symbol
:
Code
1. Anode
TO-236AA/SOT-23
Panasonic Mini3-G3-B
JEITA
3.
SC-59A
DB3X209K0L
Silicon epitaxial planar type
For high frequency rectification
Features
2. N.C
Short reverse recovery time trr
Low forward voltage VF
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1of4
Unit: mm
to
Parameter Symbol Rating
Reverse voltage VR 20
Non-repetitive peak forward surge current
*1
IFSM 3
+125
V
Storage temperature Tstg
-40 toToprOperating ambient temperature
°C-55
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
12
3
Doc No.
TT4-EA-12404
Revision.
2
Established
:
2010-02-26
:
2013-12-13
Product Standards
Schottky Barrier Diode
DB3X209K0L
Electrical Characteristics Ta = 25 C 3 C
Note: 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031
measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
4. *1 : trr measurement circuit
Page
ns
IF = IR = 100 mA,
2.4
Irr = 0.1× IR, RL = 100
V
μAReverse current
Forward voltage
VF2 IF = 500 mA 0.5 V
Parameter Symbol Conditions UnitMax
of 4
Min Typ
30
2
pF
Reverse recovery time
*1
trr
0.3
IR VR = 10 V
VF1 IF = 10 mA
7Terminal capacitance Ct VR = 10 V, f = 1 MHz
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 μs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse Output Pulse
I
rr
= 0.1 × I
R
Doc No.
TT4-EA-12404
Revision.
2
Established
:
2010-02-26
:
2013-12-13
Product Standards
Schottky Barrier Diode
DB3X209K0L
Technical Data ( reference )
Page 3 of 4
IF - VF
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V)
Forward current IF (A)
-40 ℃
25 ℃
85 ℃
100 ℃
Ta = 125 ℃
IR - VR
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0 5 10 15 20
Reverse voltage VR (V)
Reverse current IR (A)
-40 ℃
25 ℃
85 ℃
Ta = 125 ℃
100 ℃
Ct - VR
0
5
10
15
20
25
30
35
40
0 5 10 15 20
Reverse voltage VR (V)
Terminal capacitance Ct (pF)
Ta = 25 ℃
f = 1 MHz
Doc No.
TT4-EA-12404
Revision.
2
Established
:
2010-02-26
:
2013-12-13
P1-P3P4-P5

DB3X209K0L

Mfr. #:
Buy DB3X209K0L
Manufacturer:
Panasonic
Description:
Schottky Diodes & Rectifiers SCHOTTKY BARRIER GL WNG 2.9x2.8mm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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