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IRFH7110TRPBF

P1-P3P4-P6P7-P9
HEXFET
®
Power MOSFET
Notes through are on page 9
Features and Benefits
PQFN 5X6 mm
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features
Benefits
Low RDSon (< 13.5mW)
Lower Conduction Losses
Low Thermal Resistance to PCB (< 1.2°C/W)
Enables better thermal dissipation
Low Profile (<0.9 mm)
results in
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification
Increased Reliability
V
DS
100 V
V
gs max
± 20
V
R
DS(on) max
(@V
GS
= 10V)
13.5
m
Ω
Q
G (typical)
58 nC
R
G (typical)
0.6
Ω
I
D
(@T
c(Bottom)
= 25°C)
50 A
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
C(Bottom)
= 25°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
-55 to + 150
3.6
0.029
104
Max.
11
37
240
± 20
100
8.6
58
50
V
W
A
°C
IRFH7110PbF
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015
Form Quantity
IRFH7110TRPBF PQFN 5mm x 6mm Tape and Reel 4000
IRFH7110TR2PBF
PQFN 5mm x 6mm Tape and Reel 400
EOL notice # 259
Orderable part number Package Type
Standard Pack
Note
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015
IRFH7110PbF
S
D
G
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
(Bottom)
Junction-to-Case
–––
1.2
R
θ
JC
(Top)
Junction-to-Case
–––
32
°C/W
R
θ
JA
Junction-to-Ambient
–––
35
R
θ
JA
(<10s)
Junction-to-Ambient
–––
22
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.Typ.Max.Units
BV
DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 10.6 13.5
m
Ω
V
GS(th)
Gate Threshold Voltage 2.0 3.0 4.0 V
ΔV
GS(t h)
Gate Threshold Voltage Coefficient ––– -9.0 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 74 ––– ––– S
Q
g
Total Gate Charge ––– 58 87
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 11 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 3.6 –––
Q
gd
Gate-to-Drain Charge ––– 16 –––
Q
godr
Gate Charge Overdrive ––– 27.4 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) ––– 19.6 –––
Q
oss
Output Charge ––– 17 ––– nC
R
G
Gate Resistance ––– 0.6
–––
Ω
t
d(on)
Turn-On Delay Time ––– 11 –––
t
r
Rise Time ––– 23 –––
t
d(off)
Turn-Off Delay Time ––– 22 –––
t
f
Fall Time ––– 18 –––
C
iss
Input Capacitance –––
3240
–––
C
oss
Output Capacitance –––
300
–––
C
rss
Reverse Transfer Capacitance –––
140
–––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 27 41 ns
Q
rr
Reverse Recovery Charge ––– 140 210 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
V
DS
= 50V
–––
V
GS
= 20V
V
GS
= -20V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 35A
––– ––– 240
––– ––– 50
Conditions
Max.
110
35
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 35A, V
DD
= 50V
di/dt = 500A/μs
T
J
= 25°C, I
S
= 35A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Typ.
–––
R
G
=1.8
Ω
V
DS
= 50V, I
D
= 35A
I
D
= 35A
I
D
= 35A
V
GS
= 0V
V
DS
= 25V
V
DS
= 16V, V
GS
= 0V
V
DD
= 50V, V
GS
= 10V
V
DS
= V
GS
, I
D
= 100μA
μA
V
GS
= 10V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
DS
= 100V, V
GS
= 0V
3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015
IRFH7110PbF
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 35A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤ 60μs PULSE WIDTH
Tj = 25°C
4.0V
VGS
TOP 10V
6.0V
5.5V
5.0V
4.8V
4.5V
4.3V
BOTTOM 4.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤ 60μs PULSE WIDTH
Tj = 150°C
4.0V
VGS
TOP 10V
6.0V
5.5V
5.0V
4.8V
4.5V
4.3V
BOTTOM 4.0V
2.0 3.0 4.0 5.0 6.0 7.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
V
DS
= 50V
≤
60μs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
0 20406080
Q
G
Total Gate Charge (nC)
0
4
8
12
16
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
I
D
= 35A
P1-P3P4-P6P7-P9

IRFH7110TRPBF

Mfr. #:
Buy IRFH7110TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFET, 100V, 58A 13.5 mOhm, 58 nC Qg
Lifecycle:
New from this manufacturer.
Delivery:
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