2SC2655-Y(TE6,F,M) Datasheet 2SC2655-Y(T6ND1,AF, 2SC2655-Y(T6STL,FM, 2SC2655-Y(T6TOJ,FM | P1-P3

2SC2655

2009-12-21

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC2655

Power Amplifier Applications

Power Switching Applications

• Low saturation voltage: V

CE (sat)

= 0.5 V (max) (I

C

= 1 A)

• High collector power dissipation: P

C

= 900 mW

• High-speed switching: t

stg

= 1.0 μs (typ.)

• Complementary to 2SA1020.

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage V

CBO

50 V

Collector-emitter voltage V

CEO

50 V

Emitter-base voltage V

EBO

5 V

Collector current I

C

2 A

Base current I

B

0.5 A

Collector power dissipation P

C

900 mW

Junction temperature T

j

150 °C

Storage temperature range T

stg

−55 to 150 °C

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Industrial Applications

Unit: mm

JEDEC TO-92MOD

JEITA ―

TOSHIBA 2-5J1A

Weight: 0.36 g (typ.)

2SC2655

2009-12-21

2

Electrical Characteristics

(Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current I

CBO

V

CB

= 50 V, I

E

= 0 ― ― 1.0 μA

Emitter cut-off current I

EBO

V

EB

= 5 V, I

C

= 0 ― ― 1.0 μA

Collector-emitter breakdown voltage V

(BR) CEO

I

C

= 10 mA, I

B

= 0 50 ― ― V

h

FE (1)

(Note 2)

V

CE

= 2 V, I

C

= 0.5 A 70 ― 240

DC current gain

h

FE (2)

V

CE

= 2 V, I

C

= 1.5 A 40 ― ―

Collector-emitter saturation voltage V

CE (sat)

I

C

= 1 A, I

B

= 0.05 A ― ― 0.5 V

Base-emitter saturation voltage V

BE (sat)

I

C

= 1 A, I

B

= 0.05 A ― ― 1.2 V

Transition frequency f

T

V

CE

= 2 V, I

C

= 0.5 A ― 100 ― MHz

Collector output capacitance C

ob

V

CB

= 10 V, I

C

= 0, f = 1 MHz ― 30 ― pF

Turn-on time t

on

― 0.1 ―

Storage time t

stg

― 1.0 ―

Switching time

Fall time t

f

I

B1

= 0.05 A, I

B2

= 0.05 A

duty cycle ≤ 1%

― 0.1 ―

μs

Note 2: h

FE (1)

classification O: 70 to 140, Y: 120 to 240

Marking

Note 3: A line under a Lot No. identifies the indication of product Labels.

Not underlined: `Pb`/INCLUDES > MCV

Underlined: `G`/RoHS COMPATIBLE or `G`/RoHS `Pb`

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

I

B1

20 μs

30 V

I

B2

Output

30 Ω

I

B2

I

B1

Input

C2655

Lot No.

Note 3

Characteristics

indicator

Part No. (or abbreviation code)

2SC2655

2009-12-21

3

Collector-emitter voltage V

CE

(V)

I

C

– V

CE

Collector current I

C

(A)

Collector current I

C

(A)

V

CE

– I

C

Collector-emitter voltage V

CE

(V)

Collector current I

C

(A)

V

CE (sat)

– I

C

Collector-emitter saturation voltage

V

CE

(sat)

(V)

Collector current I

C

(A)

h

FE

– I

C

DC current gain h

FE

Collector current I

C

(A)

V

CE

– I

C

Collector-emitter voltage V

CE

(V)

Collector current I

C

(A)

V

CE

– I

C

Collector-emitter voltage V

CE

(V)

10

0.01

100

0.03 0.1

1

Common emitter

V

CE

= 2 V

Ta = 100°C

25

−55

50

300

500

1000

30

0.3

Common emitter

I

C

/I

B

= 20

0.02

0.01

0.1

0.03 0.1 0.3 1

Ta = 100°C

25

−55

0.05

0.3

0.5

1

0.6

0

0 0.4 0.8 1.2 2.0 2.4 1.6

0.2

0.4

0.8

1.0

Common emitter

Ta = 25° C

20 I

B

= 5 mA

40

10

30

0.6

0

0 0.4 0.8 1.2 2.0 2.4 1.6

0.2

0.4

0.8

1.0

Common emitter

Ta = 100°C

20 I

B

= 5 mA

40

10

30

0.6

0

0 0.4 0.8 1.2 2.0 2.4 1.6

0.2

0.4

0.8

1.0

Common emitter

Ta = −55°C

20

50

I

B

= 5 mA

40

10

30

4 6 8 10 2 12 14 0

2.4

1.6

1.2

0.8

0.4

0

8

0

10

I

B

= 2 mA

12

4

6

15

Common emitter

Ta = 25°C

2.0

18

25

20

2SC2655-Y(TE6,F,M)

2SC2655-Y(TE6,F,M)

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