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MAC223A6,127
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
NXP Semiconductors
MAC223A6
4Q T
riac
MAC223A6
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
12 November 2013
3 / 13
7.
Limiting values
T
able 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
DRM
repetitive peak off-state voltage
-
400
V
I
T(RMS)
RMS on-state current
full sine wave; T
mb
≤ 91 °C;
Fig. 1
;
Fig. 2
;
Fig. 3
-
25
A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4
;
Fig. 5
-
190
A
I
TSM
non-repetitive peak on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
-
230
A
I
2
t
I2t for fusing
t
p
= 10 ms; SIN
-
180
A
2
s
I
T
= 30 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
-
50
A/µs
I
T
= 30 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
-
50
A/µs
I
T
= 30 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
-
50
A/µs
dI
T
/dt
rate of rise of on-state current
I
T
= 30 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
-
10
A/µs
I
GM
peak gate current
-
2
A
P
GM
peak gate power
-
5
W
P
G(A
V)
average gate power
over any 20 ms period
-
0.5
W
T
stg
storage temperature
-40
150
°C
T
j
junction temperature
-
125
°C
NXP Semiconductors
MAC223A6
4Q T
riac
MAC223A6
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
12 November 2013
4 / 13
0
0
3
a
a
d
9
9
4
0
2
0
4
0
6
0
8
0
10
-2
10
-1
1
10
surge duration (s)
I
T
(RM
S)
(A
)
f = 50 Hz; T
mb
= 91 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
003aad995
0
1
0
2
0
3
0
-5
0
0
5
0
1
0
0
1
5
0
T
m
b
(
°
C
)
I
T
(RM
S)
(A
)
Fig. 2.
RMS on-state current as a function of mounting
base temperature; maximum values
0
0
3
a
a
d
9
9
1
0
1
0
2
0
3
0
4
0
0
1
0
2
0
3
0
I
T
(RM
S
)
(A
)
P
to
t
(W
)
= 1
8
0
°
1
2
0
°
9
0
°
6
0
°
3
0
°
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
α
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(A
V)
Fig. 3.
T
otal power dissipation as a function of RMS on-state current; maximum values
NXP Semiconductors
MAC223A6
4Q T
riac
MAC223A6
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
12 November 2013
5 / 13
003aad992
0
5
0
1
0
0
1
5
0
2
0
0
1
10
10
2
10
3
number of cycles
I
T
S
M
(A
)
I
TSM
t
I
T
T
j(init)
= 25 °C max
1/f
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
0
0
3
a
a
d
9
9
3
10
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
I
T
S
M
(A
)
I
TSM
t
I
T
T
j(init)
= 25 °C max
t
p
(1)
(2)
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
MAC223A6,127
Mfr. #:
Buy MAC223A6,127
Manufacturer:
WeEn Semiconductors
Description:
Triacs RAIL TRIAC
Lifecycle:
New from this manufacturer.
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