IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXHH40N150HV
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
C
ik
s
2825 pF
C
oks
V
AK
= 25V, V
GK
= 0V, f = 1MHz 164 pF
C
rks
50 pF
Q
g(on)
99 nC
Q
gk
I
C
= 40A, V
GK
= 15V, V
AK
= 600V 22 nC
Q
ga
36 nC
t
ri
100 ns
t
d
50 ns
t
ri
100 ns
t
d
50 ns
R
thJC
0.18 °C/W
R
thCS
0.21 °C/W
Capacitive Discharge, T
J
= 25°C
I
A
= 2000A, V
GK
= 15V, R
G
= 1
V
AK
= 1000V, L < 20nH, Notes 2 & 3
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. It is recommended to use a gate driver capable of supplying more than 4Amps
and
>15V gate voltage.
3. Refer to fig. 8 & 9.
Capacitive Discharge, T
J
= 125°C
I
A
= 2000A, V
GK
= 15V, R
G
= 1
V
AK
= 1000V, L < 20nH, Notes 2 & 3
TO-247HV Outline
PINS:
1 - Gate 2 - Cathode
3, 4 - Anode
E
R
A
Q
S
A3
e
D
c
b
A1
L1
D3
D1
D2
E2
E3
3X
2X
4X
3X
A2
b1
0P
E1
0P1
4
31 2
e1
L
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
