©2000 Fairchild Semiconductor International Rev. A, February 2000
KSB1098
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics
T
C
=25°C unless otherwise noted
*
Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage - 100 V
V
CEO
Collector-Emitter Voltage - 100 V
V
EBO
Emitter-Base Voltage - 7 V
I
C
Collector Current (DC) - 5 A
I
CP
*Collector Current (Pulse) - 8 A
I
B
Base Current - 0.5 A
P
C
Collector Dissipation (T
a
=25°C) 2 W
P
C
Collector Dissipation (T
C
=25°C) 20 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
= - 100V, I
E
= 0 - 1 µA
I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 3 mA
h
FE1
h
FE2
* DC Current Gain V
CE
= - 2V, I
C
= - 3A
V
CE
= - 2V, I
C
= - 5A
2000
500
15K
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= - 3A, I
B
= - 3mA - 1.5 V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= - 3A, I
B
= - 3mA - 2 V
t
ON
Turn ON Time V
CC
= - 50V, I
C
= - 3A
I
B1
= - I
B2
= - 3mA
R
L
= 17Ω
0.5 µs
t
STG
Storage Time 1 µs
t
F
Fall Time 1 µs
Classification R O Y
h
FE1
2000 ~ 5000 3000 ~ 7000 5000 ~ 15000
KSB1098
Low Frequency Power Amplifier
• Low Speed Switchng Industrial Use
• Complement to KSD1589
1
1.Base 2.Collector 3.Emitter
TO-220F
