Characteristics STTH20W02C
2/8 Doc ID 023126 Rev 1
1 Characteristics
When diodes 1 and 2 are used simultaneously:
Tj
(diode 1)
= P
(diode 1)
x R
th(j-c)
(Per diode) + P
(diode 2)
x R
th
(c)
To evaluate the conduction losses use the following equation:
P = 0.8 x I
F(AV)
+ 0.025 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
F(RMS)
RMS forward current 20 A
I
F(AV)
Average forward current, δ = 0.5
T
c
= 120 °C Per diode 10
A
T
c
= 110 °C Per device 20
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 80 A
T
stg
Storage temperature range -65 to + 175 ° C
T
j
Maximum operating junction temperature + 175 ° C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 4 °C / W
Total
2.5 °C / W
R
th(c)
Coupling 1 °C / W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
1. Pulse test: tp = 5 ms, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
5
µA
T
j
= 125° C 3 30
V
F
(2)
2. Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
T
j
= 25° C
I
F
= 10 A
1.20
V
T
j
= 150 °C 0.89 1.05
T
j
= 25° C
I
F
= 20 A
1.40
T
j
= 150° C 1.10 1.30