FDU8796 Datasheet FDU8796 | P1-P3

March 2006

FDD8796/FDU8796 N-Channel PowerTrench

®

MOSFET

FDD8796/FDU8796 Rev. B

www.fairchildsemi.com1

FDD8796/FDU8796

N-Channel PowerTrench

®

MOSFET

25V, 35A, 5.7mΩ

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

r

DS(on)

and fast switching speed.

Application

 Vcore DC-DC for Desktop Computers and Servers

 VRM for Intermediate Bus Architecture

Features

 Max r

DS(on)

= 5.7mΩ at V

GS

= 10V, I

D

= 35A

 Max r

DS(on)

= 8.0mΩ at V

GS

= 4.5V, I

D

= 35A

 Low gate charge: Q

g(10)

= 37nC(Typ), V

GS

= 10V

 Low gate resistance

 Avalanche rated and 100% tested

 RoHS Compliant

D

G

S

Short Lead I-PAK

I-PAK

(TO-251AA)

G

DS

G

D

S

MOSFET Maximum Ratings T

C

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

V

DS

Drain to Source Voltage 25 V

V

GS

Gate to Source Voltage ±20 V

I

D

Drain Current -Continuous (Package Limited) 35

A -Continuous (Die Limited) 98

-Pulsed (Note 1) 305

E

AS

Single Pulse Avalanche Energy (Note 2) 91 mJ

P

D

Power Dissipation 88 W

T

J

, T

STG

Operating and Storage Temperature -55 to 175 °C

R

θJC

Thermal Resistance, Junction to Case TO_252, TO_251 1.7 °C/W

R

θJA

Thermal Resistance, Junction to Ambient TO_252, TO_251 100 °C/W

R

θJA

Thermal Resistance, Junction to Ambient TO-252,1in

2

copper pad area 52 °C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDD8796 FDD8796 TO-252AA 13’’ 12mm 2500 units

FDU8796 FDU8796 TO-251AA N/A (Tube) N/A 75 units

FDU8796 FDU8796_F071 TO-251AA N/A (Tube) N/A 75 units

L

E

A

D

F

R

E

M

T

A

E

L

N

T

I

O

M

P

E

N

I

FDD8796/FDU8796 N-Channel PowerTrench

®

MOSFET

FDD8796/FDU8796 Rev. B

2 www.fairchildsemi.com

Electrical Characteristics T

J

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

VDSS

Drain to Source Breakdown Voltage I

D

= 250µA, V

GS

= 0V 25 V

∆B

VDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250µA, referenced to

25

°C

7 mV/°C

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 20V

V

GS

= 0V T

J

= 150°C

1

µA

250

I

GSS

Gate to Source Leakage Current V

GS

= ±20V ±100 nA

On Characteristics

V

GS(th)

Gate to Source Threshold Voltage V

GS

= V

DS

, I

D

= 250µA 1.2 1.8 2.5 V

∆V

GS(th)

∆T

J

Gate to Source Threshold Voltage

Temperature Coefficient

I

D

= 250µA, referenced to

25

°C

-6.7 mV/°C

r

DS(on)

Drain to Source On Resistance

V

GS

= 10V, I

D

= 35A 4.5 5.7

mΩ

V

GS

= 4.5V, I

D

= 35A 6.0 8.0

V

DS

= 10V, I

D

= 35A

T

J

= 175°C

6.9

9.5

Dynamic Characteristics

C

iss

Input Capacitance

V

DS

= 13V, V

GS

= 0V,

f = 1MHz

1960 2610 pF

C

oss

Output Capacitance 455 605 pF

C

rss

Reverse Transfer Capacitance 315 475 pF

R

G

Gate Resistance f = 1MHz 1.1 Ω

Switching Characteristics

t

d(on)

Turn-On Delay Time

V

DD

=13V, I

D

= 35A

V

GS

= 10V, R

GS

= 20Ω

10 20 ns

t

r

Rise Time 24 39 ns

t

d(off)

Turn-Off Delay Time 99 158 ns

t

f

Fall Time 57 91 ns

Q

g

Total Gate Charge V

GS

= 0 to10V

V

DD

=13V,

I

D

= 35A,

I

g

= 1.0mA

37 52 nC

Q

g

Total Gate Charge V

GS

= 0 to 5V 19 27 nC

Q

gs

Gate to Source Gate Charge 6 nC

Q

gd

Gate to Drain Charge 6 nC

Drain-Source Diode Characteristics

V

SD

Source to Drain Diode Voltage

V

GS

= 0V, I

S

= 35A 0.9 1.25 V

V

GS

= 0V, I

S

= 15A 0.8 1.0 V

t

rr

Reverse Recovery Time I

F

= 35A, di/dt = 100A/µs 30 45 ns

Q

rr

Reverse Recovery Charge I

F

= 35A, di/dt = 100A/µs 23 35 nC

Notes:

1: Pulse time < 300µs, Duty cycle = 2%.

2: Starting T

J

= 25°C, L = 0.3mH, I

AS

= 24.7A, V

DD

= 23V, V

GS

= 10V.

FDD8796/FDU8796 N-Channel PowerTrench

®

MOSFET

FDD8796/FDU8796 Rev. B

3 www.fairchildsemi.com

Typical Characteristics T

J

= 25°C unless otherwise noted

Figure 1. On Region Characteristics

01234

0

10

20

30

40

50

60

70

V

GS

= 3.5V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V

GS

= 3V

V

GS

= 4.5V

V

GS

= 10V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

Figure 2. Normalized

0 10203040506070

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

GS

= 3V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT(A)

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 3.5V

On-Resistance vs Drain

Current and Gate Voltage

Figure 3.

-80 -40 0 40 80 120 160 200

0.6

0.8

1.0

1.2

1.4

1.6

1.8

T

J

, JUNCTION TEMPERATURE (

o

C)

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

= 35A

V

GS

= 10V

Normalized On Resistance vs Junction

Temperature

Figure 4.

246810

2

4

6

8

10

12

14

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

T

J

= 175

o

C

T

J

= 25

o

C

I

D

=35A

r

DS(on)

, ON-RESISTANCE (mΩ)

V

GS

, GATE TO SOURCE VOLTAGE (V)

On-Resistance vs Gate to Source

Voltage

Figure 5. Transfer Characteristics

01234

0

10

20

30

40

50

60

70

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

T

J

= -55

o

C

T

J

= 25

o

C

T

J

= 175

o

C

I

D

, DRAIN CURRENT (A)

V

GS

, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0 0.3 0.6 0.9 1.2

1E-3

0.01

0.1

1

10

100

T

J

= -55

o

C

T

J

= 25

o

C

T

J

= 175

o

C

V

GS

= 0V

I

S

, REVERSE DRAIN CURRENT (A)

V

SD

, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode Forward

Voltage vs Source Current

FDU8796

FDU8796

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