2SB1706TL

2SB1706
Transistors
Rev.D 1/2
Low frequency amplifier
2SB1706
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) V
CE(sat)
-370mV
At lc= -1.5A / l
B
= -75mA
zExternal dimensions (Unit : mm)
Each lead has same dimensions
(1) Base
(2) Emitter
(3) Collector
TSMT3
0
~
0.1
0.16
0.85
1.0MAX
0.7
0.3
~
0.6
(
2
)
(
1
)
(
3
)
2.9
2.8
1.9
1.6
0.950.95
0.4
zAbsolute maximum ratings (Ta=25°C)
Parameter
Single pulse, Pw=1ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
30
30
6
2
500
150
55 to +150
4
1
Unit
V
V
V
A
A
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
2
1
Each Terminal Mounted on a Recommended
2
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
V
CB
= −10V, I
E
=0A, f=1MHz
Transition frequency
f
T
280
MHz
V
CE
= −2V, I
E
=200mA, f=100MHz
BV
CBO
30
−−
V
I
C
= −10µA
Collector-emitter breakdown voltage
BV
CEO
30
−−
V
I
C
= −1mA
Collector-base breakdown voltage
BV
EBO
6
−−
V
I
E
= −10µA
Emitter-base breakdown voltage
I
CBO
−−
100
nA V
CB
= −30V
Collector cutoff curent
I
EBO
−−
100
nA V
EB
= −6V
Emitter cutoff current
V
CE(sat)
−−180
370 mV
I
C
= −1.5A, I
B
= −75mA
Collector-emitter saturation voltage
h
FE
270 680
V
CE
= −2V, I
C
= −200mA
DC current gain
Cob 20
pF
Collector output capacitance
2SB1706
Transistors
Rev.D 2/2
zPackaging specifications
package
Code
Taping
Basic ordering unit(pieces)
2SB1706
TL
3000
Type
zElectrical characteristic curves
Fig.1 DV current gain
vs. collector current
10
100
1000
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
VCE= 2V
Pulsed
Ta=100 C
Ta =40 C
Ta=25 C
0.01
0.1
1
10
0.001 0.01 0.1 1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.2 Collector-emitter saturation voltage
vs. collector current
IC/IB=20/1
Pulsed
Ta=25 C
Ta =40 C
Ta=100 C
0.1
1
10
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
Fig.3 Base-emitter saturation voltage
vs. collectir current
Ta=25 C
Pulsed
I
C
/I
B
=20/1
I
C
/I
B
=50/1
I
C
/I
B
=10/1
0.1
1
10
0.01
BASE TO EMITTER CURRENT : V
BE
(V)
COLLECTOR CURRENT :I
C
(A)
0.1 1 10
Fig.4 Grounded emitter propagation
characteristics
VBE=2V
Pulsed
Ta=100 C
Ta=25 C
Ta =40 C
10
100
1000
0.01 0.1 1 10
EMITTER CURRENT : I
E
(A)
TRANSITION FREQUENCY : fT (MHz)
Ta=25 C
VCE= 2V
f=100MHz
Fig.5 Gain bandwidth product
vs. emitter curent
COLLECTOR CURRENT : I
C
(A)
SWITCHINGTIME : (ns)
Fig.6 Switching time
Ta=
25 C
V
CE
= 12V
I
C
/I
B
=20/1
Pulsed
0.01
0.1 1
10
1
10
100
1000
10000
tstg
tdon
tf
tr
100
1000
1
10
EMITTER TO BASE VOLTAGE : V
BE
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
0.001 0.1 1000.01 1 10
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Cib
Cob
IC=0A
f=1MHz
Ta=25 C
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
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Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

2SB1706TL

Mfr. #:
Manufacturer:
ROHM Semiconductor
Description:
Bipolar Transistors - BJT PNP 30V 2A
Lifecycle:
New from this manufacturer.
Delivery:
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