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SQJ456EP-T1_GE3

P1-P3P4-P6P7-P9P10-P11
SQJ456EP
www.vishay.com
Vishay Siliconix
S11-2288-Rev. F, 28-Nov-11
1
Document Number: 65279
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
d
•100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) 100
R
DS(on)
(Ω) at V
GS
= 10 V 0.026
R
DS(on)
(Ω) at V
GS
= 6 V 0.030
I
D
(A) 32
Configuration Single
D
G
S
N-Channel MOSFET
4
6.15 mm
PowerPAK
®
SO-8L Single
5.13 mm
3
2
1
G
S
S
S
D
ORDERING INFORMATION
Package PowerPAK SO-8L
Lead (Pb)-free and Halogen-free SQJ456EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
a
I
D
32
A
T
C
= 125 °C 21
Continuous Source Current (Diode Conduction)
a
I
S
32
Pulsed Drain Current
b
I
DM
128
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
30
Single Pulse Avalanche Energy E
AS
45 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
83
W
T
C
= 125 °C 27
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
e, f
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
65
°C/W
Junction-to-Case (Drain) R
thJC
1.8
SQJ456EP
www.vishay.com
Vishay Siliconix
S11-2288-Rev. F, 28-Nov-11
2
Document Number: 65279
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 100 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.5 3.0 3.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 100 V - - 1
μA V
GS
= 0 V V
DS
= 100 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 100 V, T
J
= 175 °C - - 150
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
≥ 5 V 30 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 9.3 A - 0.021 0.026
Ω
V
GS
= 6 V I
D
= 8.8 A - 0.024 0.030
V
GS
= 10 V I
D
= 9.3 A, T
J
= 125 °C - 0.040 0.049
V
GS
= 10 V I
D
= 9.3 A, T
J
= 175 °C - 0.051 0.063
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 9.3 A - 36 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 2673 3342
pF Output Capacitance C
oss
- 292 365
Reverse Transfer Capacitance C
rss
- 106 133
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 15 V, I
D
= 6 A
-4263
nC Gate-Source Charge
c
Q
gs
-10-
Gate-Drain Charge
c
Q
gd
-7.6-
Gate Resistance R
g
f = 1 MHz 0.31 1.72 3.12 Ω
Turn-On Delay Time
c
t
d(on)
V
DD
= 10 V, R
L
= 10 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 6 Ω
-1421
ns
Rise Time
c
t
r
-1218
Turn-Off Delay Time
c
t
d(off)
-3553
Fall Time
c
t
f
-812
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
- - 128 A
Forward Voltage V
SD
I
F
= 4.3 A, V
GS
= 0 - 0.75 1.2 V
SQJ456EP
www.vishay.com
Vishay Siliconix
S11-2288-Rev. F, 28-Nov-11
3
Document Number: 65279
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
8
16
24
32
40
012345
V
GS
= 10 V thru 6 V
4 V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
5 V
0.00
0.01
0.02
0.03
0.04
0 8 16 24 32 40
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 6 V
R
DS(on)
- On-Resistance ()
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45
I
D
= 6 A
V
DS
= 15 V
0
8
16
24
32
40
0123456
T
C
= 125 °C
-55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)
I
D
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
500
1000
1500
2000
2500
3000
3500
0 20406080100
C
iss
C
oss
C
rss
0.5
0.9
1.3
1.7
2.1
2.5
175
V
GS
= 10 V
I
D
= 9.3 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
- 50 1501251007550250- 25
P1-P3P4-P6P7-P9P10-P11

SQJ456EP-T1_GE3

Mfr. #:
Buy SQJ456EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 100V 32A 83W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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