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MAX9982ETP+D

P1-P3P4-P6P7-P9P10-P12
General Description
The MAX9982 fully integrated SiGe mixer is optimized to
meet the demanding requirements of GSM850, GSM900,
and CDMA850 base-station receivers. Each high-lineari-
ty device includes a local oscillator (LO) switch, LO dri-
ver, and active mixer. On-chip baluns are also integrated
to allow for single-ended RF and LO inputs. Since the
active mixer provides 2dB of conversion gain, the device
effectively replaces the IF amplifier stage, which typically
follows most passive mixer implementations.
The MAX9982 provides exceptional linearity with an
input IP3 of greater than +26dBm. The integrated LO
driver allows for a wide range of LO drive levels from
-5dBm to +5dBm. In addition, the built-in switch
enables rapid LO selection of less than 250ns, as need-
ed for GSM frequency-hopping applications.
The MAX9982 is available in a 20-pin QFN package
(5mm ✕ 5mm) with an exposed paddle and is specified
over the -40°C to +85°C extended temperature range.
Applications
GSM850/GSM900 2G and 2.5G EDGE Base
Station Receivers
Cellular cdmaOne
TM
and cdma2000
TM
Base
Station Receivers
TDMA and Integrated Digital Enhanced
Network (iDEN)
TM
Base Station Receivers
Digital and Spread-Spectrum Communication
Systems
Microwave Links
Features
♦ +26.8dBm Input IP3
♦ +13dBm Input 1dB Compression Point
♦ 825MHz to 915MHz RF Frequency Range
♦ 70MHz to 170MHz IF Frequency Range
♦ 725MHz to 1085MHz LO Frequency Range
♦ 2dB Conversion Gain
♦ 12dB Noise Figure
♦ -5dBm to +5dBm LO Drive
♦ 5V Single-Supply Operation
♦ Built-In LO Switch
♦ ESD Protection
♦ Internal RF and LO Baluns for Single-Ended Inputs
MAX9982
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
________________________________________________________________ Maxim Integrated Products 1
19-2489; Rev 1; 9/02
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
Ordering Information
PART
TEMP RANGE
PIN-PACKAGE
MAX9982ETP
-40°C to +85°C
20 QFN-EP* (5mm × 5mm)
20
19
18
17
GND
IF+
IF-
GND
16 GND
13
12
11
14
15
GND
GND
GND
LO2
LO1
4
3
2
1
RFBIAS
TAP
RF
5GND
GND
6
7
8
9
V
CC
V
CC
GND
GND
LOSEL
10
MAX9982
TOP VIEW
QFN
Pin Configuration/
Functional Diagram
Typical Application Circuit appears at end of data sheet.
cdmaOne is a trademark of CDMA Development Group.
cdma2000 is a trademark of Telecommunications Industry
Association.
iDEN is a trademark of Motorola, Inc.
*EP = exposed paddle.
MAX9982
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
V
CC
........................................................................-0.3V to +5.5V
IF+, IF-, RFBIAS, LOSEL.............................-0.3V to (V
CC
+ 0.3V)
TAP .....................................................................................+5.0V
RFBIAS Current.....................................................................5mA
RF, LO1, LO2 Input Power .............................................+20dBm
Continuous Power Dissipation (T
A
= +70°C)
20-Pin QFN (derate 20.8mW/°C above T
A
= +70°C) ....1.66W
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
CC
= 4.75V to 5.25V, no RF signals applied, all RF inputs and outputs terminated with 50Ω, T
A
=
-40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= 5V, T
A
= +25°C, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
UNITS
Supply Voltage V
CC
4.75 5.00 5.25
V
Supply Current I
CC
138 168 193
mA
Input High Voltage V
IH
3.5
V
CC
+
0.3V
V
Input Low Voltage V
IL
0.4 V
LOSEL Input Current I
LOSEL
-5 +5 µA
AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
CC
= 4.75V to 5.25V, P
LO
= -5dBm to +5dBm, f
RF
= 825MHz to 915MHz, f
LO
= 725MHz to 1085MHz,
T
A
= -40°C to +85°C, unless otherwise noted. Typical values at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 870MHz, f
LO
=
770MHz, T
A
= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
UNITS
RF Frequency f
RF
825 915
MHz
LO Frequency f
LO
725 1085
MHz
IF Frequency f
IF
Must meet RF and LO frequency range; IF
matching components affect IF frequency
range
70
170
MHz
LO Drive Level P
LO
-5 +5
dBm
Cellular band,
f
RF
= 825MHz to
850MHz
2.6
Conversion Gain (Note 3) G
C
V
CC
= +5.0V,
f
IF
= 100MHz,
low-side injection,
P
RF
= 0dBm,
P
LO
= -5dBm
GSM band,
f
RF
= 880MHz to
915MHz
2.1
dB
Gain Variation Over Temperature
T
A
= -40°C to +85°C
-0.0135
dB/°C
Gain Variation from Nominal f
RF
= 825MHz to 915MHz, 3σ
±0.6
dB
MAX9982
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
_______________________________________________________________________________________ 3
AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit, V
CC
= 4.75V to 5.25V, P
LO
= -5dBm to +5dBm, f
RF
= 825MHz to 915MHz, f
LO
= 725MHz to 1085MHz,
T
A
= -40°C to +85°C, unless otherwise noted. Typical values at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 870MHz, f
LO
=
770MHz, T
A
= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Loss from LO to IF
Inject P
IN
= -20dBm at f
LO
+ 100MHz into
LO port; measure 100MHz at IF port as
P
OUT
; no RF signal at RF port
47 dB
Cellular band, f
RF
= 825MHz to 850MHz
11.3
Noise Figure NF
GSM band, f
RF
= 880MHz to 915MHz
11.8
dB
Low-side injection
12.9
Input 1dB Compression Point P
1dB
High-side injection
14.5
dBm
Input Third-Order Intercept Point
IIP3
V
CC
= +5.0V, P
RF
= 0dBm, P
LO
= -5dBm,
T
A
= +25°C (Notes 3, 4)
26.8
dBm
Input Third-Order Intercept Point
Variation Over Temperature
∆IIP3 T
A
= -40°C to +85°C
±0.5
dB
P
LO
= +5dBm 65
2 RF - 2 LO Spur Rejection 2 × 2
f
RF
= 915,
f
LO
= 815MHz,
f
SPUR
= 865MHz,
P
RF
= -5dBm
P
LO
= 0dBm 57
dBc
P
LO
= +5dBm 89
3 RF - 3 LO Spur Rejection 3 × 3
f
RF
= 915,
f
LO
= 815MHz,
f
SPUR
= 848.3MHz,
P
RF
= -5dBm
P
LO
= 0dBm 89
dBc
Maximum LO Leakage at RF Port
P
LO
= -5dBm to +5dBm,
f
LO
= 725MHz to 1085MHz
-40
dBm
Maximum LO Leakage at IF Port
P
LO
= -5dBm to +5dBm,
f
LO
= 725MHz to 1085MHz
-28
dBm
Minimum RF to IF Isolation
P
LO
= -5dBm to +5dBm,
f
RF
= 825MHz to 915MHz
11 dB
LO1 to LO2 Isolation
f
RF
= 825MHz to 915MHz, P
LO1
= P
LO2
=
+5dBm, f
IF
= 100MHz (Note 5)
51 dB
LO Switching Time 50% of LOSEL to IF settled within 2°
250
ns
RF Return Loss 19 dB
LO port active 20
LO Return Loss
LO port inactive 12
dB
IF Return Loss RF and LO terminated (Note 6) 15 dB
Note 1: Guaranteed by design and characterization.
Note 2: All limits reflect losses of external components. Output measurements taken at IF OUT of Typical Application Circuit.
Note 3: Production tested.
Note 4: Two tones at 1MHz spacing, 0dBm each at RF port.
Note 5: Measured at IF port at IF frequency. LO1 and LO2 are offset by 1MHz.
Note 6: IF return loss can be optimized by external matching components.
P1-P3P4-P6P7-P9P10-P12

MAX9982ETP+D

Mfr. #:
Buy MAX9982ETP+D
Manufacturer:
Maxim Integrated
Description:
RF Mixer 825-915MHz Dual SiGe Active Mixer
Lifecycle:
New from this manufacturer.
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