NE5820M53-T1-A Datasheet NE5820M53-T1-A | P1-P3

R09DS0005EJ0200 Rev.2.00 Page 1 of 6

May 20, 2011

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PreliminaryData Sheet

NE5820M53

P-channel MOS Field Effect Transistor

for Impedance Converter of Microphone

DESCRIPTION

The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone.

The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting.

FEATURES

• Low noise : N

V

= −114 dBV TYP. @V

DD

= 2.0 V, C

in

= 3 pF, R

L

= 15 kΩ

• Low input capacitance : C

iss

= 1.5 pF TYP. @V

DD

= 2.0 V, R

L

= 15 kΩ

• Low consumption current : I

DD

= 85

μ

ATYP. @V

DD

= 2.0 V, R

L

= 15 kΩ

• High-density surface mounting : 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm)

• Built-in the capacitor for RF noise immunity

• High ESD voltage

APPLICATIONS

• Microphone, Sensor etc.

ORDERING INFORMATION

Part Number Order Number Package Quantity Marking Supplying Form

NE5820M53-T1 NE5820M53-T1-A

3-pin thin-type

lead-less minimold

(Pb-Free)

10 kpcs/reel B8

• Embossed tape 8 mm wide

• Pin 3 face the perforation

side of the tape

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: NE5820M53

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0005EJ0200

Rev.2.00

May 20, 2011

NE5820M53

R09DS0005EJ0200 Rev.2.00 Page 2 of 6

May 20, 2011

ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)

Parameter Symbol Ratings Unit

Input Voltage (IN-GND) V

in

−0.8 to +0.8 V

Input Current (IN-GND) I

in

0.5 mA

Output Voltage (OUT-GND) V

out

−0.5 to +6 V

Output Current (OUT-GND) I

out

17 mA

Channel Temperature T

ch

130 °C

Operating Ambient Temperature T

A

−40 to +95 °C

Storage Temperature T

stg

−65 to +150 °C

RECOMMENDED OPERATING RANGE (TA = +25°C)

Parameter Symbol MIN. TYP. MAX. Unit

Supply Voltage

Note

V

DD

1.0 2.0 10.0 V

Note: R

L

= 15 kΩ

ELECTRICAL CHARACTERISTICS

(T

A

= +25°C, R

L

= 15 kΩ, unless otherwise specified)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Consumption Current I

DD

V

DD

= 2 V, V

in

= 0 V 60 85 105

μ

A

Input Capacitance C

iss

V

DD

= 2 V, f = 1 MHz − 1.5 − pF

Voltage Gain G

V

DD

= 2 V, V

in

= 10 mVrms,

C

in

= 3 pF, f = 1 kHz,

see TEST CIRCUIT

−4.5 −3.0 − dB

Reduced Voltage Characteristics

Δ

G

VV

V

DD

= 2 → 1.5 V, V

in

= 10 mVrms,

C

in

= 3 pF, f = 1 kHz,

see TEST CIRCUIT

− 0.3 − dB

Frequency Characteristics

Δ

G

Vf

V

DD

= 2 V, V

in

= 10 mVrms,

C

in

= 3 pF, f = 1 kHz → 110 Hz,

see TEST CIRCUIT

− 0.05 − dB

Output Noise Voltage N

V

DD

= 2 V, V

in

= 0 Vrms, C

in

= 3 pF,

A-Curve,

see TEST CIRCUIT

− −114 − dBV

Total Harmonic Distortion THD

V

DD

= 2 V, V

out

= 30 mVrms,

C

in

= 3 pF, f = 1 kHz,

see TEST CIRCUIT

− 0.1 − %

TEST CIRCUIT

Voltage Gain, Frequency Characteristics, Output Noise Voltage, Total Harmonic Distortion

33 F

μ

+

15 kΩ

V

in

3 pF

V

DD

V

out

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NE5820M53

R09DS0005EJ0200 Rev.2.00 Page 3 of 6

May 20, 2011

TYPICAL CHARACTERISTICS (T

A

= +25°C, unless otherwise specified)

0

–2

–4

–6

–8

40 60

120

V

DD

= 2 V

C

in

= 3 pF

R

L

= 15 kΩ

V

in

= 10 mVrms

f = 1 kHz

100

Consumption Current I

DD

( A)

Voltage Gain G

V

(dB)

VOLTAGE GAIN vs.

CONSUMPTION CURRENT

μ

80

100

10

1

0.1

0.01

0.001

10

1 000

V

DD

= 2 V

C

in

= 3 pF

R

L

= 15 kΩ

f = 1 kHz

100

Total Harmonic Distortion THD (%)

Output Voltage V

out

(mVrms)

TOTAL HARMONIC DISTORTION

vs. OUTPUT VOLTAGE

Voltage Gain G

V

(dB)

Frequency f (Hz)

VOLTAGE GAIN vs. FREQUENCY

0

–2

–4

–6

–8

1

10 100 000

V

DD

= 2 V

C

in

= 3 pF

R

L

= 15 kΩ

V

in

= 10 mVrms

100 1 000 10 000

–90

–100

–110

–120

02

10

C

in

= 3 pF

R

L

= 15 kΩ

V

in

= 0 Vrms

468

1

9

357

Output Noise Voltage N

V

(dBV)

Supply Voltage V

DD

(V)

OUTPUT NOISE VOLTAGE

vs. SUPPLY VOLTAGE

0

–2

–4

–6

–8

02

10

C

in

= 3 pF

R

L

= 15 kΩ

V

in

= 10 mVrms

f = 1 kHz

468

1

9

357

Voltage Gain G

V

(dB)

Supply Voltage V

DD

(V)

VOLTAGE GAIN vs. SUPPLY VOLTAGE

600

200

300

400

500

0

410

R

L

= 15 kΩ

100

0

826

39

715

μ

Consumption Current I

DD

( A)

Supply Voltage V

DD

(V)

vs. SUPPLY VOLTAGE

CONSUMPTION CURRENT

Remark The graphs indicate nominal characteristics.

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NE5820M53-T1-A

NE5820M53-T1-A

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