IRF5805PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.2 V T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 19 29 ns T
J
= 25°C, I
F
= -2.0A
Q
rr
Reverse Recovery Charge ––– 16 24 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
-15
-2.0
A
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 0.098 V
GS
= -10V, I
D
= -3.8A
––– 0.165 V
GS
= -4.5V, I
D
= -3.0A
V
GS(th)
Gate Threshold Voltage -1.0 ––– -2.5 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 3.5 ––– ––– S V
DS
= -10V, I
D
= -3.8A
––– ––– -15 V
DS
= -24V, V
GS
= 0V
––– ––– -25 V
DS
= -24V, V
GS
= 0V, T
J
= 70°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Q
g
Total Gate Charge ––– 11 17 I
D
= -3.8A
Q
gs
Gate-to-Source Charge ––– 2.3 ––– nC V
DS
= -15V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 1.5 ––– V
GS
= -10V
t
d(on)
Turn-On Delay Time ––– 11 17 V
DD
= -15V, V
GS
= -10V
t
r
Rise Time ––– 14 21 I
D
= -1.0A
t
d(off)
Turn-Off Delay Time ––– 90 135 R
G
= 6.0Ω
t
f
Fall Time ––– 49 74 R
D
= 15Ω
C
iss
Input Capacitance ––– 511 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 79 ––– pF V
DS
= -25V
C
rss
Reverse Transfer Capacitance ––– 50 ––– ƒ = 1.0MHz
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
Ω
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
Surface mounted on 1 in square Cu board, t ≤ 10sec.
