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PD57045-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
June 2010 Doc ID 12616 Rev 2 1/20
20
PD57045-E
PD57045S-E
RF POWER transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P
OUT
= 45 W with 13dB gain @ 945 MHz / 28 V
■ New RF plastic package
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. The device boasts the excellent
gain, linearity and reliability of ST’s latest
LDMOS technology mounted in the first true SMD
plastic RF power package, PowerSO-10RF.
Device’s superior linearity performance makes it
an ideal solution for base station applications. The
PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294).
Figure 1. Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
Table 1. Device summary
Order code Package Packing
PD57045-E PowerSO-10RF (formed lead) Tube
PD57045S-E PowerSO-10RF (straight lead) Tube
PD57045TR-E PowerSO-10RF (formed lead) Tape and reel
PD57045STR-E PowerSO-10RF (straight lead) Tape and reel
www.st.com
Contents PD57045-E, PD57045S-E
2/20 Doc ID 12616 Rev 2
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.3 Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1 PD57045S-E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
PD57045-E, PD57045S-E Electrical data
Doc ID 12616 Rev 2 3/20
1 Electrical data
1.1 Maximum ratings
1.2 Thermal data
Table 2. Absolute maximum ratings (T
CASE
= 25°C)
Symbol Parameter Value Unit
V
(BR)DSS
Drain-Source Voltage 65 V
V
GS
Gate-Source Voltage ± 20 V
I
D
Drain Current 5 A
P
DISS
Power Dissipation (@ Tc = 70°C) 73 W
T
J
Max. Operating Junction Temperature 165 °C
T
STG
Storage Temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Junction - case thermal resistance 1.2 °C/W
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

PD57045-E

Mfr. #:
Buy PD57045-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
Lifecycle:
New from this manufacturer.
Delivery:
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