MBRB15H45CT, MBRB15H60CT
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jun-2018
1
Document Number: 88782
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
DESIGN SUPPORT TOOLS
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 7.5 A
V
RRM
45 V, 60 V
I
FSM
150 A
V
F
0.55 V, 0.61 V
I
R
50 μA
T
J
max. 175 °C
Package D
2
PAK (TO-263AB)
Circuit configuration Common cathode
D
2
PAK (TO-263AB)
PIN 1
PIN 2
K
HEATSINK
1
2
K
MBRB15H45CT
MBRB15H60CT
click logo to get started
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRB15H45CT MBRB15H60CT UNIT
Maximum repetitive peak reverse voltage V
RRM
45 60
VWorking peak reverse voltage V
RWM
45 60
Maximum DC blocking voltage V
DC
45 60
Maximum average forward rectified current (fig. 1)
total device
I
F(AV)
15
A
per diode 7.5
Non-repetitive avalanche energy at 25 °C, I
AS
= 4 A, L = 10 mH per diode E
AS
80 mJ
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
I
FSM
150
A
Peak repetitive reverse surge current per diode at t
p
= 2.0 μs, 1 kHz I
RRM
1.0 0.5
Peak non-repetitive reverse energy (8/20 μs waveform) E
RSM
20 10 mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 F, R = 1.5 k
V
C
25 kV
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-65 to +175 °C
