© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 11
1 Publication Order Number:
MSD42WT1/D
MSD42WT1G,
NSVMSD42WT1G
NPN High Voltage
Transistors
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Value Unit
Collector-Base Voltage V
(BR)CBO
300 V
Collector-Emitter Voltage V
(BR)CEO
300 V
Emitter-Base Voltage V
(BR)EBO
6.0 V
Collector Current − Continuous I
C
150 mA
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation (Note 1) P
D
450 mW
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
274 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage
(I
C
= 1.0 mA, I
B
= 0)
V
(BR)CEO
300 − V
Collector-Base Breakdown Voltage
(I
C
= 100 mA, I
E
= 0)
V
(BR)CBO
300 − V
Emitter-Base Breakdown Voltage
(I
E
= 100 mA, I
E
= 0)
V
(BR)EBO
6.0 − V
Collector-Base Cutoff Current
(V
CB
= 200 V, I
E
= 0)
I
CBO
− 0.1 mA
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
B
= 0)
I
EBO
− 0.1 mA
DC Current Gain (Note 2)
(V
CE
= 10 V, I
C
= 1.0 mA)
(V
CE
= 10 V, I
C
= 30 mA)
h
FE1
h
FE2
25
40
−
−
−
Collector-Emitter Saturation Voltage
(Note 2) (I
C
= 20 mA, I
B
= 2.0 mA)
V
CE(sat)
− 0.5 V
1. FR-4 @ 10 mm
2
, 1 oz. Copper traces.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
3
1
2
Device Package Shipping
†
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
MSD42WT1G 3000 / Tape & ReelSC−70
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1D MG
G
1
1D = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
SC−70
NSVMSD42WT1G 3000 / Tape & ReelSC−70
(Pb−Free)
