HCPL-817-300E Datasheet HCPL-817-000E, HCPL-817-36BE, HCPL-817-56DE | P4-P6

4

HCPL-817-300E

Absolute Maximum Ratings (T

A

= 25°C)

Storage Temperature, T

S

–55°C to +125°C

Operating Temperature, T

A

–30°C to +100°C

Lead Solder Temperature, max.

(1.6 mm below seating plane)

260°C for 10 s

Average Forward Current, I

F

50 mA

Reverse Input Voltage, V

R

6 V

Input Power Dissipation, P

I

70 mW

Collector Current, I

C

50 mA

Collector-Emitter Voltage, V

CEO

70 V

Emitter-Collector Voltage, V

ECO

6 V

Collector Power Dissipation 150 mW

Total Power Dissipation 200 mW

Isolation Voltage, V

iso

(AC for 1 minute, R.H. = 40 ~ 60%) 5000 Vrms

Note: Non-halide ﬂux should be used.

1. One-time soldering reﬂow is recommended within the

condition of temperature and time proﬁle shown.

2. When using another soldering method such as infrared

ray lamp, the temperature may rise partially in the mold

of thedevice. Keep the temperature on the package of

the device within the condition of (1) above.

6.5 ± 0.5

(0.256)

Dimensions in Millimeters and (Inches)

4.6 ± 0.5

(0.181)

2.54 ± 0.25

(0.1)

3.5 ± 0.5

(0.138)

7.62 ± 0.3

(0.3)

0.26

(0.010)

10.16 ± 0.3

(0.4)

1.2 ± 0.1

(0.047)

0.35 ± 0.25

(0.014)

1.0 ± 0.25

(0.039)

A 817

YWW

DATE CODE

RANK

LEAD FREE

ANODE

Solder Reﬂow Temperature Proﬁle

30 seconds

60 ~ 150 sec 90 sec 60 sec

60 sec

25°C

150°C

200°C

250°C

260°C (Peak Temperature)

217°C

Time (sec)

Temperature (°C)

5

Figure 1. Forward current vs. temperature. Figure 2. Collector power dissipation vs. temperature.

Figure 3. Collector-emitter saturation voltage vs. forward current.

* CTR = x 100%

I

C

I

F

Electrical Speciﬁcations (T

A

= 25°C)

Parameter Symbol Min. Typ. Max. Units Test Conditions

Forward Voltage V

F

– 1.2 1.4 V I

F

= 20 mA

Reverse Current I

R

––10

μA

V

R

= 4 V

Terminal Capacitance C

t

– 30 250 pF V = 0, f = 1 KHz

Collector Dark Current I

CEO

– – 100 nA V

CE

= 20 V

Collector-Emitter Breakdown Voltage BV

CEO

70––VI

C

= 0.1 mA

Emitter-Collector Breakdown Voltage BV

ECO

6––V

I

E

= 10 μA

Collector Current I

C

2.5 – 30 mA I

F

= 5 mA, V

CE

= 5 V,

R

BE

= ∞

*Current Transfer Ratio CTR 50 – 600 %

Collector-Emitter Saturation Voltage V

CE(sat)

– 0.1 0.2 V I

F

= 20 mA, I

C

= 1 mA

Response Time (Rise) t

r

–418

μs

V

CE

= 2 V, I

C

= 2 mA

R

L

= 100 Ω

Response Time (Fall) t

f

–318

μs

Cut-oﬀ Frequency f

c

–80–KHzV

CC

= 5 V, I

C

= 2 mA

R

L

= 100 Ω, –3 dB

Isolation Resistance R

iso

5 x 10

10

1 x 10

11

–

Ω

DC 500 V

40 ~ 60% R.H.

Floating Capacitance C

f

– 0.6 1.0 pF V = 0, f = 1 MHz

I

F

– FORWARD CURRENT – mA

0

T

A

– AMBIENT TEMPERATURE – °C

50

10

40

75 125250 50 100-30

60

30

20

P

C

– COLLECTOR POWER DISSIPATION – mW

0

T

A

– AMBIENT TEMPERATURE – °C

100

50

200

150

75 125250 50 100-30

0

I

F

– FORWARD CURRENT – mA

2

10 1550

1

3

4

5

6

V

CE(SAT.)

– COLLECTOR-EMITTER

SATURATION VOLTAGE – V

T

A

= 25°C

I

C

= 0.5 mA

I

C

= 1 mA

I

C

= 3 mA

I

C

= 5 mA

I

C

= 7 mA

6

Figure 4. Forward current vs. forward voltage. Figure 5. Current transfer ratio vs. forward current.

Figure 6. Collector current vs. collector-emitter voltage. Figure 7. Relative current transfer ratio vs. temperature.

Figure 8. Collector-emitter saturation voltage vs. temperature. Figure 9. Collector dark current vs. temperature.

I

F

– FORWARD CURRENT – mA

1

V

F

– FORWARD VOLTAGE – V

2.0 3.0

10

5

500

1.00

0.5 1.5 2.5

2

20

50

100

200

T

A

= 25°C

T

A

= 0°C

T

A

= -25°C

0

I

F

– FORWARD CURRENT – mA

40

200

20

60

120

140

160

CTR – CURRENT TRANSFER RATIO – %

V

CE

= 5 V

T

A

= 25°C

80

100

180

10 5021520

I

C

– COLLECTOR CURRENT – mA

0

V

CE

– COLLECTOR-EMITTER VOLTAGE – V

40

20

50

I

F

= 30 mA

I

F

= 25 mA

30

10

I

F

= 20 mA

I

F

= 15 mA

693012 45 78

RELATIVE CURRENT TRANSFER RATIO – %

0

100

50

150

V

CE

= 5 V

I

F

= 5 mA

T

A

– AMBIENT TEMPERATURE – °C

75250 50 100-30

V

CE(SAT.)

– COLLECTOR-EMITTER

SATURATION VOLTAGE – V

0

0.10

0.02

0.16

I

C

= 1 mA

I

F

= 20 mA

T

A

– AMBIENT TEMPERATURE – °C

75250 50 100-25

0.04

0.06

0.08

0.12

0.14

I

CEO

– COLLECTOR DARK CURRENT – A

T

A

– AMBIENT TEMPERATURE – °C

V

CE

= 20 V

10

-11

10

-10

10

-9

10

-8

10

-7

10

-6

75250 50 100-25

10

-5

P

C

(MAX.)

T

A

= 25°C

I

F

= 10 mA

I

F

= 5 mA

T

A

= 75°C

T

A

= 50°C

HCPL-817-300E

HCPL-817-300E

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