© Semiconductor Components Industries, LLC, 2011
April, 2011 − Rev. 0
1 Publication Order Number:
NTMS4917N/D
NTMS4917N
Power MOSFET
30 V, 10.5 A, N−Channel, SO−8
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Optimized for 5 V, 12 V Gate Drives
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Printers
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
8.5
A
T
A
= 70°C 6.8
Power Dissipation R
q
JA
(Note 1)
Steady
State
T
A
= 25°C P
D
1.28 W
Continuous Drain
Current R
q
JA
(Note 2)
Steady
State
T
A
= 25°C
I
D
7.1
A
T
A
= 70°C 5.7
Power Dissipation R
q
JA
(Note 2)
T
A
= 25°C P
D
0.88 W
Continuous Drain
Current R
q
JA
, t v 10 s
(Note 1)
Steady
State
T
A
= 25°C
I
D
10.5
A
T
A
= 70°C 8.4
Power Dissipation
R
q
JA
, t v 10 s(Note 1)
Steady
State
T
A
= 25°C P
D
1.95 W
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
127 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
150
°C
Source Current (Body Diode) I
S
2.4 A
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
DD
= 30 V, V
GS
= 10 V,
I
L
= 8 A
pk
, L = 1.0 mH, R
G
= 25 W)
E
AS
32 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
97.4
°C/W
Junction−to−Ambient – t v 10 s (Note 1)
R
q
JA
64
Junction−to−Foot (Drain)
R
q
JF
25.9
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
142.4
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
11 mW @ 10 V
10.5 A
N−Channel
D
S
G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
15 mW @ 4.5 V
NTMS4917NR2G SO−8
(Pb−Free)
2500/Tape & Reel
4917N
AYWWG
G
4917N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
18
Drain
Drain
Drain
Drain
Source
Source
Source
Gate
Top View
(Note: Microdot may be in either location)
