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NLAS2750MUTAG

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 3
1 Publication Order Number:
NLAS2750/D
NLAS2750
Low Voltage Dual SPDT
Analog Switch with
Negative Swing Audio
Capability
The NLAS2750 is a dual SPDT low on−resistance analog switch. It
can operate from a single 1.8 V to 5.0 V power supply. It is a
bi−directional switch that can switch a negative voltage swing audio
signal without requiring a coupling capacitor. With a single power
supply, the audio signal can swing over the range from −2.5 V to V
CC
.
Features
• Capable to Switch Negative Swing Audio Signals Without Requiring
a DC Blocking Capacitor
• Low On−resistance (R
ON
)
• Low Voltage Digital Control Logic:
(V
INH
= 1.4 V @ V
CC
= 2.7 V to 4.3 V)
• Low Power Consumption (I
CC
≤ 250 nA)
• Space Saving 1.4 mm x 1.8 mm Package UQFN Package
• This is a Pb−Free Device
Typical Applications
• Cellular Phones
• Portable Media Players
www.onsemi.com
MARKING
DIAGRAM
AL = Specific Device Code
M
= Date Code/Assembly Location
G = Pb−Free Device
(Note: Microdot may be in either location)
UQFN10
CASE 488AT
V
CC
IN2
C
OM2
GND
8
9
10
12
NC1
NC2
NO1
76
5
4
3NO2
IN1
COM
1
FUNCTION TABLE
IN1 (Pin 4) IN2 (Pin 8) Function
See detailed ordering and shipping information on page 7 o
f
this data sheet.
ORDERING INFORMATION
0
1
X
X
X
X
0
1
COM1 = NC1
COM1 = NO1
COM2 = NC2
COM2 = NO2
ALMG
G
1
NLAS2750
www.onsemi.com
2
NC
IN
NOCOM
Figure 1. Logic Equivalent Circuit
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
Positive DC Supply Voltage −0.3 to +6.5 V
V
IS
Analog Input Voltage (COM, NO, NC) (Notes 1 and 2) Min. V
IS
= V
CC
− 6.5 V or
−2.5 V (whichever is greater)
Max. V
IS
= V
CC
+ 0.3 V
V
V
IN
Digital (IN1, IN2) −0.3 to +6.5 V
I
CC
Current (GND, V
CC
) 50 mA
I
IS
Continuous Switch Current (COM, NO, NC) (Note 1) ±250 mA
I
ISP
Peak Switch Current (Pulsed at 1 ms, 10% Duty Cycle) ±500 mA
T
STG
Storage Temperature −65 to +150 °C
P
D
Power Dissipation 200 mW
V
ESD
ESD (Human Body Model)
All pins
I/O to GND
6
8
kV
I
LU
Latch−up (per JESD78) 300 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Signals on COM, NO, NC, exceeding V
CC
will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
2. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum is used in this data sheet.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Power Supply Range 1.8 5.5 V
V
IN
Digital Select Input Voltage Overvoltage Tolerance (OVT) (IN1, IN2) GND 5.5 V
V
IS
Analog Input Voltage (NC, NO, COM) (Note 3) −2.5 V
CC
V
T
A
Operating Temperature Range −40 +85 °C
t
r
, t
f
Input Rise or Fall Time (IN1, IN2)
V
CC
< 2.7 V
V
CC
≥ 2.7 V
20
10
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
3. The voltage across the switch should be ≤ 5.5 V.
NLAS2750
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (V
CC
= 2.7 V, ±10%) (Note 4)
Symbol
Parameter Test Conditions
Guaranteed Maximum Limit
Unit
−405C to 855C
Min Typ Max
ANALOG SWITCH
V
IS
Analog Signal Range (Note 5) −2.5 V
CC
V
R
DS(on)
On−Resistance
V
CC
= 2.7 V,
V
IS
= (V
CC
− 4.5 V), −1 V, 0 V
1 V, 2 V, V
CC
I
IS
= 100 mA
0.6 1.3
R
ON
On−Resistance Match 0.1
R
ON
Flatness On−Resistance Resistance
Flatness
0.37
I
NO/NC(off)
Switch Off Leakage Current
V
CC
= 2.7 V,
V
NC/NO
= −2.5 V or 2.5 V,
V
COM
= 2.5 V or −2.5 V
50 nA
I
COM(off)
±250 nA
I
COM(on)
Channel On Leakage Current 50 ±250 nA
DIGITAL CONTROL
V
INH
Input Voltage High V
CC
= 5 V
V
CC
= 2.7 V to 4.3 V
1.6
1.4
V
V
INL
Input Voltage Low V
CC
= 2.7 V to 5 V 0.6 V
C
IN
Input Capacitance 5 pF
I
INL
or I
INH
Input Current V
IN
= 0 or V
CC
±1
A
POWER CONSUMPTION
I
CC
Maximum Quiescent Supply
Current
V
CC
= 2.7 V to 4.3 V 50 ±250 nA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Typical values are measured at 25°C and are for design aid only, not guaranteed nor subject to production testing.
5. Guaranteed by design, not subject to production testing.
DYNAMIC CHARACTERISTICS (V
CC
= 2.7 V, ±10%) (Note 4)
Symbol Parameter Test Conditions
Guaranteed Maximum Limit
Unit
−405C to 855C
Min Typ Max
t
BBM
Break−Before−Make Time
(Notes 6 and 7)
V
CC
= 2.7 V, V
IS
= 1.5 V,
R
L
= 50 , C
L
= 35 pF
1000 1250 ns
t
ON(EN)
Enable Turn−On Time
(Notes 6 and 7)
80 150 ns
t
OFF(EN)
Enable Turn−Off Time
(Notes 6 and 7)
110 130 ns
Q
INJ
Charge Injection (Note 6)
C
L
= 1 nF, R
GEN
= 0 ,
V
GEN
= 0 V
60 pC
OIRR Off−Isolation (Note 6)
V
CC
= 2.7 V, R
L
= 50 ,
C
L
= 5 pF, f = 300 kHz
−58 dB
X
TALK
Crosstalk (Notes 6 and 8) −61 dB
BW Bandwidth (Note 6)
V
CC
= 2.7 V, R
L
= 50 , −3 dB
44 MHz
C
NC/NO(off)
Channel−Off Capacitance
(Note 6)
V
CC
= 2.7 V, f = 1 MHz
25 pF
C
COM/NC/NO(on)
Channel−On Capacitance
(Note 6)
75 pF
6. Guaranteed by design, not subject to production testing.
7. V
IS
= input voltage to perform proper function.
8. Crosstalk Measured between channels.
P1-P3P4-P6P7-P8

NLAS2750MUTAG

Mfr. #:
Buy NLAS2750MUTAG
Manufacturer:
ON Semiconductor
Description:
Analog Switch ICs LOW VOLTAGE DUAL SPDT ANA
Lifecycle:
New from this manufacturer.
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