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TPCP8J01(TE85L,F,M

P1-P3P4-P6P7-P9
TPCP8J01
2018-05-15
4
© 2018
Toshiba Electronic Devices & Storage Corporation
BRT
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current
I
CBO
V
CB
= 50 V, I
E
= 0 100
nA
I
CEO
V
CB
= 50 V, I
E
= 0 500
Emitter cut-off current I
EBO
V
EB
= 6 V, I
C
= 0 0.081 0.15 mA
DC current gain h
FE
V
CE
= 5 V, I
C
= 10 mA 80
Collector-emitter saturation voltage V
CE (sat)
I
C
= 5 mA, I
B
= 0.25 mA
0.1 0.3 V
Input voltage (ON) V
I (ON)
V
CE
= 0.2 V, I
C
= 5 mA
0.7 1.8 V
Input voltage (OFF) V
I (OFF)
V
CE
= 5 V, I
C
= 0.1 mA 0.5 1.0 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 5 mA 250 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 3 6 pF
Input resistor R1 7 10 13 kΩ
Resistor ratio R1/R2 0.191 0.213 0.232
TPCP8J01
2018-05-15
5
© 2018
Toshiba Electronic Devices & Storage Corporation
MOSFET
Drain current I
D
(A)
R
DS (ON)
– I
D
Drain-
source ON resistance
R
DS
(ON)
(mΩ)
Drain-source voltage V
DS
(V)
Drain-source voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(A)
Gate-source voltage V
GS
(V)
I
D
– V
GS
Drain current I
D
(A)
Drain-
source voltage V
DS
(V)
Gate-source voltage V
GS
(V)
V
DS
– V
GS
Drain current I
D
(A)
Y
fs
– I
D
Forward transfer admittance |Y
fs
| (S)
I
D
– V
DS
Drain current I
D
(A)
−5
−3
−2
0
−4
−1
0 −0.2 −0.4
−0.6
−0.8
−1.0
−8
−6
−4
−2
0
−10
0 −2 −5 −4
−3 −1
C
ommon source
Ta = 25°C
Pulse test
−2.2
−2.3
−2.4
−2.7
−10
−2.5
−2.6
−2.8
V
GS
= −2.1 V
−4.5
−3
−3.5
V
GS
= −2.1V
−2.2
−2.4
−2.3
−2.6
−2.5
−4.5
−10
−2.8
−2.
−3.5
−3
Common source
Ta = 25°C
Pulse test
0
−8
−10
−5
Common source
V
DS
= −10 V
Pulse test
0
−1
−2
−3
−4
Ta = −55°C
25
100
−6
−8
−4
0
−0.3
−0.4
−0.5
0
−2
−4
−6
−8
−10
−0.2
−0.1
Common source
Ta = 25℃
Pulse test
I
D
=
−
5.5 A
−1.3
−2.7
Common source
V
DS
= −10 V
Pulse test
−0.1
−10
−100
−0.1 −1 −100
25
100
Ta = −55°C
−1
−10
1
−0.1
−1
−10
−100
10
1000
100
Common source
Ta = 25°C
Pulse test
V
GS
= −10 V
−4
TPCP8J01
2018-05-15
6
© 2018
Toshiba Electronic Devices & Storage Corporation
Drain-source voltage V
DS
(V)
Capacitance – V
DS
Capacitance C (pF)
Ambient temperature Ta (°C)
R
DS (ON)
– Ta
Drain-
source ON resistance
R
DS
(ON)
( mΩ)
Gate-
source voltage V
GS
(V)
Total gate charge Q
g
(nC)
Dynamic input/output
characteristics
Drain-source voltage V
DS
(V)
Gate threshold voltage V
th
(V)
Ambient temperature Ta (°C)
V
th
– Ta
Drain power dissipation P
D
(W)
Ambient temperature Ta (°C)
P
D
– Ta
Drain-source voltage V
DS
(V)
I
DR
– V
DS
Drain reverse current I
DR
(A)
160 −40 0 40 80 120 −80
80
60
40
20
0
I
D
= −5.5A
−1.3A
−2.7A
V
GS
= −10 V
Common source
Pulse test
V
GS
= −4 V
I
D
= −5.5A
−1.3A
−2.7A
0
0 40 80 120 160
0.5
1.5
2
2.5
1
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
(1) Device mounted on a
glass-epoxy board(a) (Note 2a)
(2) Device mounted on a
glass-epoxy board (b) (Note 2b)
0
−1
0.4
−10
−100
1.2 1.6 0.8 2
V
GS
= 0 V
−10
−4.5
−1
−2
Common source
Ta = 25°C
Pulse test
−3
1
−0.1
10
100
1000
10000
−1 −10
−100
C
iss
C
oss
C
rss
Common source
V
GS
= 0 V
f = 1 MHz
Ta = 25°C
0
−1
−2
−4
−80 −40 0 40 80 120 160
−3
Common source
V
DS
= −10 V
I
D
= −1 mA
Pulse test
−
8
−
4
−
16
0
0 −10 −30
−40
−50
−40
−20
−10
−30
0
−20
−
12
V
DD
= −24 V
V
DS
V
GS
−6
−12
Common source
I
D
= −5.5 A
Ta = 25°C
Pulse test
P1-P3P4-P6P7-P9

TPCP8J01(TE85L,F,M

Mfr. #:
Buy TPCP8J01(TE85L,F,M
Manufacturer:
Toshiba
Description:
MOSFET MOSFET P-CH/NPN 32V, 6A
Lifecycle:
New from this manufacturer.
Delivery:
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