PESDXS5UD_SER_2 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 7 December 2006 3 of 13
NXP Semiconductors
PESDxS5UD series
Fivefold ESD protection diode arrays
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4, 5 or 6 to 2.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4, 5 or 6 to 2.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
P
PP
peak pulse power t
p
= 8/20 µs
[1][2]
- 200 W
I
PP
peak pulse current t
p
= 8/20 µs
[1][2]
PESD3V3S5UD - 20 A
PESD5V0S5UD - 20 A
PESD12VS5UD - 10 A
PESD15VS5UD - 6 A
PESD24VS5UD - 4 A
Per device
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
Per diode
V
ESD
electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2]
PESD3V3S5UD - 30 kV
PESD5V0S5UD - 30 kV
PESD12VS5UD - 30 kV
PESD15VS5UD - 30 kV
PESD24VS5UD - 23 kV
PESDxS5UD series MIL-STD-883 (human
body model)
-10kV
Table 7. ESD standards compliance
Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 10 kV
