MMBT3906-7 Datasheet MMBT3906-7-F, MMBT3906-7 | P1-P3

DS30059 Rev. 8 - 2 1 of 3 MMBT3906

www.diodes.com

ã Diodes Incorporated

MMBT3906

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

· Epitaxial Planar Die Construction

· Complementary NPN Type Available

· (MMBT3904)

· Ideal for Medium Power Amplification and

Switching

· Also Available in Lead Free Version

Characteristic Symbol MMBT3906 Unit

Collector-Base Voltage

V

CBO

-40 V

Collector-Emitter Voltage

V

CEO

-40 V

Emitter-Base Voltage

V

EBO

-5.0 V

Collector Current - Continuous (Note 1)

I

C

-200 mA

Power Dissipation (Note 1)

P

d

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

R

qJA

417 °C/W

Operating and Storage and Temperature Range

T

j

,T

STG

-55 to +150 °C

Features

Maximum Ratings

@ T

A

= 25°C unless otherwise specified

Mechanical Data

· Case: SOT-23, Molded Plastic

· Case material - UL Flammability Rating

Classification 94V-0

· Moisture sensitivity: Level 1 per J-STD-020A

· Terminals: Solderable per MIL-STD-202,

Method 208

· Also Available in Lead Free Plating (Matte Tin

Finish). Please see Ordering Information,

Note 4, on Page 2

· Terminal Connections: See Diagram

· Marking (See Page 2): K3N

· Ordering & Date Code Information: See Page 2

· Weight: 0.008 grams (approx.)

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

A

E

J

L

TOP VIEW

M

B

C

H

G

D

K

C

B

E

SOT-23

Dim Min Max

A

0.37 0.51

B

1.20 1.40

C

2.30 2.50

D

0.89 1.03

E

0.45 0.60

G

1.78 2.05

H

2.80 3.00

J

0.013 0.10

K

0.903 1.10

L

0.45 0.61

M

0.085 0.180

a

0° 8°

All Dimensions in mm

E

B

C

SPICE MODEL: MMBT3906

DS30059 Rev. 8 - 2 2 of 3 MMBT3906

www.diodes.com

Electrical Characteristics

@ T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

V

(BR)CBO

-40 ¾ V

I

C

= -10mA, I

E

= 0

Collector-Emitter Breakdown Voltage

V

(BR)CEO

-40 ¾ V

I

C

= -1.0mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(BR)EBO

-5.0 ¾ V

I

E

= -10mA, I

C

= 0

Collector Cutoff Current

I

CEX

¾ -50 nA

V

CE

= -30V, V

EB(OFF)

= -3.0V

I

CBO

¾ -50 nA

V

CB

= -30V, I

E

= 0

Base Cutoff Current

I

BL

¾ -50 nA

V

CE

= -30V, V

EB(OFF)

= -3.0V

ON CHARACTERISTICS (Note 2)

DC Current Gain

h

FE

60

80

100

60

30

¾

300

¾

I

C

= -100µA, V

CE

= -1.0V

I

C

= -1.0mA, V

CE

= -1.0V

I

C

= -10mA, V

CE

= -1.0V

I

C

= -50mA, V

CE

= -1.0V

I

C

= -100mA, V

CE

= -1.0V

Collector-Emitter Saturation Voltage

V

CE(SAT)

¾

-0.25

-0.40

V

I

C

= -10mA, I

B

= -1.0mA

I

C

= -50mA, I

B

= -5.0mA

Base- Emitter Saturation Voltage

V

BE(SAT)

-0.65

¾

-0.85

-0.95

V

I

C

= -10mA, I

B

= -1.0mA

I

C

= -50mA, I

B

= -5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

obo

¾ 4.5 pF

V

CB

= -5.0V, f = 1.0MHz, I

E

= 0

Input Capacitance

C

ibo

¾ 10 pF

V

EB

= -0.5V, f = 1.0MHz, I

C

= 0

Input Impedance

h

ie

2.0 12 kW

V

CE

= 10V, I

C

= 1.0mA,

f = 1.0kHz

Voltage Feedback Ratio

h

re

0.1 10 x 10

-4

Small Signal Current Gain

h

fe

100 400 ¾

Output Admittance

h

oe

3.0 60 mS

Current Gain-Bandwidth Product

f

T

250 ¾ MHz

V

CE

= -20V, I

C

= -10mA,

f = 100MHz

Noise Figure

NF ¾ 4.0 dB

V

CE

= -5.0V, I

C

= -100mA,

R

S

= 1.0kW, f = 1.0kHz

SWITCHING CHARACTERISTICS

Delay Time

t

d

¾ 35 ns

V

CC

= -3.0V, I

C

= -10mA,

V

BE(off)

= 0.5V, I

B1

= -1.0mA

Rise Time

t

r

¾ 35 ns

Storage Time

t

s

¾ 225 ns

V

CC

= -3.0V, I

C

= -10mA,

I

B1

= I

B2

= -1.0mA

Fall Time

t

f

¾ 75 ns

Notes: 2. Short duration test pulse used to minimize self-heating effect.

3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

4. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above.

Example: MMBT3906-7-F.

K3N

YM

K3N = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: N = 2002

M = Month ex: 9 = September

Marking Information

Ordering Information

Device

Packaging Shipping

MMBT3906 -7

SOT-23 3000/Tape & Reel

Date Code Key

Month Jan Feb March Apr May Jun Jul

Aug Sep Oct Nov Dec

Code

1234567

89 OND

(Note 3)

Year 1998 1999 2000 2001 2002 2003 2004

2005 2006 2007 2008 2009

Code

JKLMNPR

ST U VW

DS30059 Rev. 8 - 2 3 of 3 MMBT3906

www.diodes.com

0

50

100

25 50

75

100 125

150

175

200

P , POWER DISSIPATION (mW)

D

T , AMBIENT TEMPERATURE (°C)

A

Fig. 1, Max Power Dissipation vs

Ambient Tem

p

erature

150

200

250

300

350

0

1

100

10

0.1

1

10

100

C , INPUT CAPACITANCE (pF)

IBO

C , OUTPUT CAPACITANCE (pF)

OBO

V , COLLECTOR-BASE VOLTAGE (V)

CB

Fig. 2, Input and Output Capacitance vs.

Collector-Base Volta

g

e

f= 1MHz

Cibo

Cobo

1

10

1000

100

0.1

1

10

1000

100

h , DC CURRENT GAIN

FE

I , COLLECTOR CURRENT (mA)

C

Fig. 3, Typical DC Current Gain vs

Collector Current

T = -25°C

A

T = +25°C

A

T = 125°C

A

V = 1.0V

CE

0.01

0.1

10

1

10

100

1000

V , COLLECTOR-EMITTER (V)

CE(SAT)

SATURATION VOLTAGE

I , COLLECTOR CURRENT (mA)

C

Fig. 4, Typical Collector-Emitter Saturation Voltage

vs. Collector Current

I

C

I

B

= 10

0.5

0.6

0.7

0.8

0.9

1

.

0

110100

V , BASE-EMITTER (V)

BE(SAT)

SATURATION VOLTAGE

I , COLLECTOR CURRENT (mA)

C

Fig. 5, Typical Base-Emitter

Saturation Volta

g

e vs. Collector Current

I

C

I

B

=10

MMBT3906-7

MMBT3906-7

Products related to this Datasheet