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PUMB14,115

P1-P3P4-P6P7-P9P10-P11
PEMB14_PUMB14_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 31 August 2009 3 of 10
NXP Semiconductors
PEMB14; PUMB14
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
5. Limiting values
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - −50 V
V
CEO
collector-emitter voltage open base - −50 V
V
EBO
emitter-base voltage open collector - −5V
I
O
output current (DC) - −100 mA
I
CM
peak collector current - −100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT363
[1]
- 200 mW
SOT666
[1] [2]
- 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
SOT363
[1]
- 300 mW
SOT666
[1] [2]
- 300 mW
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
T
amb
≤ 25 °C
SOT363
[1]
- - 625 K/W
SOT666
[1] [2]
- - 625 K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
T
amb
≤ 25 °C
SOT363
[1]
- - 416 K/W
SOT666
[1] [2]
- - 416 K/W
PEMB14_PUMB14_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 31 August 2009 4 of 10
NXP Semiconductors
PEMB14; PUMB14
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
7. Characteristics
Table 8. Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current
V
CB
= −50 V; I
E
= 0 A - - −100 nA
I
CEO
collector-emitter
cut-off current
V
CE
= −30 V; I
B
= 0 A - - −1 µA
V
CE
= −30 V; I
B
= 0 A;
T
j
= 150 °C
--−50 µA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
= 0 A - - −100 nA
h
FE
DC current gain V
CE
= −5 V; I
C
= −1 mA 100 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA; I
B
= −0.5 mA - - −150 mV
R1 bias resistor 1 (input) 33 47 61 kΩ
C
c
collector capacitance V
CB
= −10 V; I
E
= i
e
= 0 A;
f=1MHz
- - 2.5 pF
V
CE
= −5 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −40 °C
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa206
100
1000
h
FE
10
I
C
(mA)
−10
−1
−10
2
−10−1
(1)
(2)
(3)
006aaa207
I
C
(mA)
−10
−1
−10
2
−10−1
−10
−1
−1
V
CEsat
(V)
−10
−2
(1)
(2)
(3)
PEMB14_PUMB14_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 31 August 2009 5 of 10
NXP Semiconductors
PEMB14; PUMB14
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
8. Package outline
Fig 3. Package outline SOT363 (SC-88)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
SOT363 SC-88
wBM
b
p
D
e
1
e
pin 1
index
A
A
1
L
p
Q
detail X
H
E
E
v M
A
AB
y
0 1 2 mm
scale
c
X
132
456
Plastic surface-mounted package; 6 leads SOT363
UNIT
A
1
max
b
p
cD
E
e
1
H
E
L
p
Qywv
mm
0.1
0.30
0.20
2.2
1.8
0.25
0.10
1.35
1.15
0.65
e
1.3
2.2
2.0
0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.25
0.15
A
1.1
0.8
04-11-08
06-03-16
P1-P3P4-P6P7-P9P10-P11

PUMB14,115

Mfr. #:
Buy PUMB14,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - Pre-Biased DOUBLE RET
Lifecycle:
New from this manufacturer.
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