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BAT42W-E3-08

P1-P3P4-P4
BAT42W, BAT43W
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 25-Feb-13
1
Document Number: 85661
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• These diodes feature very low turn-on voltage
and fast switching. These devices are protected
by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
• For general purpose applications
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
PARTS TABLE
PART ORDERING CODE
INTERNAL
CONSTRUCTION
TYPE MARKING REMARKS
BAT42W
BAT42W-E3-08 or BAT42W-E3-18
Single diode L2
Tape and reel
BAT42W-HE3-08 or BAT42W-HE3-18
BAT43W
BAT43W-E3-08 or BAT43W-E3-18
Single diode L3
BAT43W-HE3-08 or BAT43W-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
30 V
Forward continuous current
(1)
I
F
200 mA
Repetitive peak forward current
(1)
t
p
< 1 s, < 0.5 I
FRM
500 mA
Surge forward current
(1)
t
p
< 10 ms I
FSM
4A
Power dissipation
(1)
T
amb
= 65 °C P
tot
200 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
300 K/W
Junction temperature T
j
125 °C
Operating temperature range T
op
- 55 to + 125 °C
Storage temperature range T
stg
- 55 to + 150 °C
BAT42W, BAT43W
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 25-Feb-13
2
Document Number: 85661
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test; t
p
300 μs, t
p
/T < 0.02
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 2 - Typical Forward Characteristics
Fig. 3 - Typical Reverse Characteristics
Fig. 4 - Typical Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 100 μA (pulsed) V
(BR)
30 V
Leakage current
(1)
V
R
= 25 V I
R
0.5 μA
V
R
= 25 V, T
j
= 100 °C I
R
100 μA
Forward voltage
(1)
I
F
= 200 mA V
F
1000 mV
I
F
= 10 mA BAT42W V
F
400 mV
I
F
= 50 mA BAT42W V
F
650 mV
I
F
= 2 mA BAT43W V
F
260 330 mV
I
F
= 15 mA BAT43W V
F
450 mV
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
7pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA,
i
R
= 1 mA, R
L
= 100
t
rr
5ns
200
18442
T
amb
- Ambient Temperature (°C)
250
200
150
100
50
50 100 1500
0
P
tot
- Power Dissipation (mW)
18443
120010008006004002000
I- Forward Current (mA)
F
1000
100
10
1
0.1
0.01
V
F
- Instantaneous Forward Voltage (mV)
25 °C
125 °C
- 40 °C
1000
100
10
1
0.1
0.01
18444
0 1020304050
V
R
- Reverse Voltage (V)
125 °C
100 °C
75 °C
50 °C
25 °C
I - Reverse Leackage Current (µA)
R
18445
14
12
10
8
6
4
2
0
0102030
V
R
- Reverse Voltage (V)
C - Diode Capacitance (pF)
D
51525
BAT42W, BAT43W
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 25-Feb-13
3
Document Number: 85661
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
P1-P3P4-P4

BAT42W-E3-08

Mfr. #:
Buy BAT42W-E3-08
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 30Volt 200mA 4A IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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