CDBQR00340-HF
Page 1
REV:A
O
Maximum Rating (at TA=25 C unless otherwise noted)
Typ
VRRM
Repetitive peak reverse voltage
Symbol
Parameter
Conditions Min
Max
Unit
V
45
VR
Reverse voltage
V
40
IFSM
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
500
PD
mW
O
C
200
+125
-40
Power Dissipation
Sunction temperature
Tj
O
C
+125
Junction temperature
TSTG
mA
IO
Average forward current
mA
30
Symbol
Typ
Parameter
Conditions Min
Max
Unit
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
IR
uA
1.5
Forward voltage
IF = 1 mA DC
VF
V
0.37
0.50
CT
Capacitance between terimnals
pF
F = 1 MHZ and 1 VDC reverse voltage
Reverse current
VR = 30V
VR = 40V
1.00
Features
-Designed for mounting on small surface.
-Extremely thin package.
-Low stored charge.
-Majority carrier conduction.
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight: 0.001 gram(approx.).
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
Comchip Technology CO., LTD.
QW-G1106
Io = 30 mA
VR = 40 Volts
RoHS Device
Halogen Free
0402/SOD-923F
SMD Schottky Barrier Diode
