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MIXA10W1200TML
P1-P3
P4-P6
© 2011 IXYS All rights reser
ved
4 - 6
20110223b
MIXA10W1
200TML
IXYS reserves the right to change limits, test conditions and dimensions.
XXXXXX.....
YWWx
XXX...
Logo
UL
Part name
Date Code
Prod. Code
Part number
M
= Module
I
= IGBT
X
= XPT
A
= standard
10
= Current Rating [A]
W
= 6-Pack
1200
= Rev
erse V
oltage [V]
T
= NTC
ML
= E1-Pack
Ordering
Part Name
Marking on Product
Delivering Mode
Base Qty
Ordering Code
Standard
MIXA 10
W 1200
TML
MIXA10W1200TML
Box
10
510155
Circuit Dia
gram
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
11, 12
15, 16
19, 20
22
21
2
1
18
17
4
3
14
13
6
5
10, 23
9, 24
NTC
8
7
© 2011 IXYS All rights reser
ved
5 - 6
20110223b
MIXA10W1
200TML
IXYS reserves the right to change limits, test conditions and dimensions.
IGBT
T1 -
T6
0
1
2
3
0
4
8
12
16
20
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
0
4
8
1
2
1
6
2
0
V
CE
[V]
I
C
[A]
9 V
11 V
5
6
7
8
9
10
11
12
13
0
4
8
12
16
20
0
1
0
2
0
3
0
0
5
10
15
20
V
GE
[V]
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
13 V
8
0
12
0
16
0
20
0
24
0
0
.0
0
.4
0
.8
1
.2
1
.6
2
.0
E
[mJ]
E
on
Fig. 1 Typ. output characteris
tics
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteris
tics
I
C
[A]
Fig. 3 Typ. tranfer characteristic
s
V
GE
[V]
Fig. 4
Typ. turn-on gate charge
Fig. 5 Typ. sw
itching ene
rgy vs. coll
ector current
E
off
Fig. 6 Typ. sw
itching ene
rgy vs. gate resis
tance
Q
G
[nC]
R
G
[
Ω
]
E
[mJ]
I
C
[A]
E
on
E
off
I
C
=
10 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
R
G
=
100
Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
=
10 A
V
CE
= 600 V
V
GE
= 15 V
T
VJ
= 125°C
T
VJ
= 125°C
© 2011 IXYS All rights reser
ved
6 - 6
20110223b
MIXA10W1
200TML
IXYS reserves the right to change limits, test conditions and dimensions.
Diode D1 - D6
200
250
300
350
400
450
500
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
Q
rr
[µC]
I
F
[A]
V
F
[V]
di
F
/dt
[A/µs]
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
5 A
10 A
20 A
e
g
r
a
h
c
y
r
e
v
o
c
e
r
e
s
r
e
v
e
r
l
a
c
i
p
y
T
8
.
g
i
F
s
c
i
t
s
i
r
e
t
c
a
r
a
h
c
d
r
a
w
r
o
f
.
p
y
T
7
.
g
i
F
Q
rr
versus. di
F
/dt (125°C)
200
250
300
350
400
450
500
0
4
8
12
16
20
24
I
RR
[A]
di
F
/dt
[A/µs]
T
VJ
= 125°C
V
R
= 600 V
5 A
10 A
20 A
Fig. 9
Typi
cal peak reverse current
I
RR
versus di
F
/dt (125°C)
200
250
300
350
400
450
500
0
100
200
300
400
500
t
rr
[ns]
di
F
/dt
[A/µs]
5 A
10 A
20 A
T
VJ
= 125°C
V
R
= 600 V
Fig. 10
Typ. recovery time t
rr
vs. di/dt (1
25°C)
Fig. 11
Typ. recovery energy E
rec
vs. di
F
/dt (125°C)
200
250
300
350
400
450
500
0.1
0.2
0.3
0.4
0.5
0.6
E
rec
[mJ]
di
F
/dt
[A/µs]
T
VJ
= 125°C
V
R
= 600 V
5 A
10 A
20 A
Fig.
12
T
ransient thermal impedance
0.001
0.01
0.1
1
10
0.1
1
10
t
p
[s]
Z
thJC
[K/W]
Diode
IGBT
IGBT
FRD
R
i
t
i
R
i
t
i
1
0.446
0.0015
0.8
0.002
2
0.415
0.03
0.58
0.03
3
0.672
0.03
0.98
0.03
4
0.467
0.08
0.04
0.08
P1-P3
P4-P6
MIXA10W1200TML
Mfr. #:
Buy MIXA10W1200TML
Manufacturer:
Littelfuse
Description:
IGBT Modules Six Pack XPT IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
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