ZTX755

PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2  JULY 94
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
* Low saturation voltage
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX754 ZTX755 UNIT
Collector-Base Voltage V
CBO
-125 -150 V
Collector-Emitter Voltage V
CEO
-125 -150 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL ZTX754 ZTX755 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-125 -150 V
I
C
=-100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-125 -150 V I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 -5 V
I
E
=-100µA, I
C
=0
Collector Cut-Off
Current
I
CBO
-100
-100
nA
nA
V
CB
=-100V, I
E
=0
V
CB
=-125V, I
E
=0
Emitter Cut-Off
Current
I
EBO
-100 -100 nA V
EB
=-3V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
-0.5
-0.5
-0.5
V
V
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1 -1.1 V I
C
=-500mA, I
B
=-50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.0 -1.0 V IC=-500mA, V
CE
=-5V*
Static Forward
Current Transfer Ratio
h
FE
50
50
20
50
50
20
I
C
=-10mA, V
CE
=-5V
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
Transition Frequency f
T
30 30 MHz I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance C
obo
20 20 pF V
CB
=-20V, f=1MHz
E-Line
TO92 Compatible
ZTX754
ZTX755
3-263
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
CE
(
sa
t
)
- (V
olts)
IC - Collector Current (Amps) IC - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
- Norma
l
ised
Ga
i
n
(
%
)
V
BE
(
sa
t
)
- (V
olts)
V
BE
- (V
olts)
I
C
-
Co
l
le
c
to
r
Cur
r
e
nt
(
Am
ps)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1100010 100
0.01
0.1
1
10
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
300µs
0.001
0.01
100.1 1
20
40
60
80
100
0.2
0.001
0.1
1
0.4
0.6
1.0
0
0.001
0.01
1
0.1
0.2
0.4
0.6
0.8
V
CE
=5V
I
C
/I
B
=10
I
C
/I
B
=10
Switching Speeds
IC - Collector Current (Amps)
Switching time
0.1 1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
td
tr
tf
µs
2.0
1.0
ts
µs
0.3
0.2
0.1
0.4
0.5
0
0.01
0.0001
0.001
1
0.01 0.1
0.6
0.8
1.0
1.2
V
CE
=5V
0.4
0.8
ZTX754
ZT
X
7
5
5
V
CE
=10V
ZTX754
ZTX755
3-264
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2  JULY 94
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
* Low saturation voltage
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX754 ZTX755 UNIT
Collector-Base Voltage V
CBO
-125 -150 V
Collector-Emitter Voltage V
CEO
-125 -150 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL ZTX754 ZTX755 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-125 -150 V
I
C
=-100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-125 -150 V I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 -5 V
I
E
=-100µA, I
C
=0
Collector Cut-Off
Current
I
CBO
-100
-100
nA
nA
V
CB
=-100V, I
E
=0
V
CB
=-125V, I
E
=0
Emitter Cut-Off
Current
I
EBO
-100 -100 nA V
EB
=-3V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
-0.5
-0.5
-0.5
V
V
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1 -1.1 V I
C
=-500mA, I
B
=-50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.0 -1.0 V IC=-500mA, V
CE
=-5V*
Static Forward
Current Transfer Ratio
h
FE
50
50
20
50
50
20
I
C
=-10mA, V
CE
=-5V
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
Transition Frequency f
T
30 30 MHz I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance C
obo
20 20 pF V
CB
=-20V, f=1MHz
E-Line
TO92 Compatible
ZTX754
ZTX755
3-263
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
CE
(
sa
t
)
- (V
olts)
IC - Collector Current (Amps) IC - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
- Norma
l
ised
Ga
i
n
(
%
)
V
BE
(
sa
t
)
- (V
olts)
V
BE
- (V
olts)
I
C
-
Co
l
le
c
to
r
Cur
r
e
nt
(
Am
ps)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1100010 100
0.01
0.1
1
10
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
300µs
0.001
0.01
100.1 1
20
40
60
80
100
0.2
0.001
0.1
1
0.4
0.6
1.0
0
0.001
0.01
1
0.1
0.2
0.4
0.6
0.8
V
CE
=5V
I
C
/I
B
=10
I
C
/I
B
=10
Switching Speeds
IC - Collector Current (Amps)
Switching time
0.1 1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
td
tr
tf
µs
2.0
1.0
ts
µs
0.3
0.2
0.1
0.4
0.5
0
0.01
0.0001
0.001
1
0.01 0.1
0.6
0.8
1.0
1.2
V
CE
=5V
0.4
0.8
ZTX754
ZT
X
7
5
5
V
CE
=10V
ZTX754
ZTX755
3-264

ZTX755

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP Super E-Line
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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