TSC5304EDCP ROG

TSC5304ED

High Voltage NPN Transistor with Diode

1/6

Version: E11

TO

-

25

1

(IPAK)

TO

-

25

2

(DPAK)

PRODUCT SUMMARY

BV

CEO

400V

BV

CBO

700V

I

C

4A

V

CE(SAT)

0.25V (Typ.) @ I

C

=0.5A, I

B

=0.1A

Features

● Build-in Free-wheeling Diode Makes Efficient Anti-

saturation Operation

● Low Base Drive Requirement

● Suitable for Half Bridge Light Ballast Application

Block Diagram

Structure

● Silicon Triple Diffused Type

● NPN Silicon Transistor

● Integrated Anti-parallel Collector-Emitter Diode

Ordering Information

Part No. Package

Packing

TSC5304EDCP ROG TO-252 2.5Kpcs / 13” Reel

TSC5304EDCH C5G TO-251 75pcs / Tube

Note: “G” denote for Halogen Free Product

Absolute Maximum Rating

(Ta = 25

o

C unless otherwise noted)

Parameter Symbol Limit Unit

Collector-Base Voltage

V

CBO

700 V

Collector-Emitter Voltage @ V

BE

=0V

V

CES

700 V

Collector-Emitter Voltage

V

CEO

400 V

Emitter-Base Voltage

V

EBO

9 V

Collector Current

I

C

4 A

Collector Peak Current (tp <5ms) I

CM

8 A

Base Current I

B

2 A

Base Peak Current (tp <5ms) I

BM

4 A

Power Total Dissipation @ Tc=25ºC P

DTOT

35 W

Maximum Operating Junction Temperature T

J

+150

o

C

Storage Temperature Range T

STG

-55 to +150

o

C

Pin

Definition

:

1. Base

2. Collector

3. Emitter

TSC5304ED

High Voltage NPN Transistor with Diode

2/6

Version: E11

Thermal Performance

Parameter Symbol Limit Unit

Thermal Resistance - Junction to Case RӨ

JC

3.57

o

C/W

Thermal Resistance - Junction to Ambient RӨ

JA

68

o

C/W

Electrical Specifications

(Ta = 25

o

C unless otherwise noted)

Parameter Conditions Symbol

Min Typ Max

Unit

Static

Collector-Base Voltage I

C

=1mA, I

B

=0 BV

CBO

700 -- -- V

Collector-Emitter Breakdown Voltage I

C

=10mA, I

E

=0 BV

CEO

400 -- -- V

Emitter-Base Breakdown Voltage I

E

=1mA, I

C

=0 BV

EBO

9 -- -- V

Collector Cutoff Current V

CB

=700V, I

E

=0 I

CBO

-- -- 100 uA

Collector Cutoff Current V

CE

=400V, I

B

=0 I

CEO

-- -- 250 uA

Emitter Cutoff Current V

EB

=7V, I

C

=0 I

EBO

-- -- 10 uA

Collector-Emitter Saturation Voltage

I

C

=0.5A, I

B

=0.1A V

CE(SAT)1

-- 0.25 0.7

V

I

C

=1A, I

B

=0.2A V

CE(SAT)2

-- 0.5 1

I

C

=2.5A, I

B

=0.5A V

CE(SAT)3

-- 1.2 1.5

I

C

=4A, I

B

=1A V

CE(SAT)4

-- 0.5 --

Base-Emitter Saturation Voltage

I

C

=1A, I

B

=0.2A V

BE(SAT)1

-- -- 1.1

V

I

C

=2A, I

B

=0.5A V

BE(SAT)2

-- -- 1.2

DC Current Gain

V

CE

=5V, I

C

=10mA

Hfe

10 -- --

V

CE

=5V, I

C

=1A 17 -- 37

V

CE

=5V, I

C

=2A 12 -- 32

Forward Voltage Drop I

F

=2A Vf -- -- 2 V

Turn On Time V

CC

=250V, I

C

=1A,

I

B1

=I

B2

=0.2A, t

p

=25uS

Duty Cycle<1%

t

ON

-- 0.2 0.6 uS

Storage Time t

STG

-- 3.0 4.5 uS

Fall Time t

f

-- 0.2 0.3 uS

Turn On Time V

CC

=5V, I

C

=0.1A,

I

B1

=I

B2

=0.02A, t

p

=25uS

Duty Cycle<1%

t

ON

-- 0.35 0.6 uS

Storage Time t

STG

6.5 -- 8.5 uS

Fall Time t

f

-- 0.3 0.6 uS

Notes: Pulsed duration =380uS, duty cycle ≤2%

TSC5304ED

High Voltage NPN Transistor with Diode

3/6

Version: E11

Electrical Characteristics Curve

(Ta = 25

o

C, unless otherwise noted)

Figure 1. Static Characteristics

Figure 2. DC Current Gain

Figure 3. Vce(sat) v.s. Vbe(sat)

Figure 4. Power Derating

Figure 5. Reverse Bias SOA

Figure 6. Safety Operating Area

TSC5304EDCP ROG

Mfr. #:

Buy TSC5304EDCP ROG

Manufacturer:

Taiwan Semiconductor

Description:

Bipolar Transistors - BJT High voltage NPN Transistor with diode

Lifecycle:

New from this manufacturer.

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