NXP Semiconductors
PMEG2020EPK
20 V, 2 A low VF MEGA Schottky barrier rectifier
PMEG2020EPK All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 10 February 2014 4 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage T
j
= 25 °C - 20 V
I
F
forward current T
sp
≤ 125 °C - 2.83 A
δ < 0.5; f = 20 kHz; T
sp
≤ 130 °C;
square wave
- 2 AI
F(AV)
average forward current
δ < 0.5; f = 20 kHz; T
amb
≤ 65 °C;
square wave
[1] - 2 A
I
FRM
repetitive peak forward current t
p
= 1 ms; δ = 0.25 - 4 A
I
FSM
non-repetitive peak forward
current
t
p
= 8 ms; T
j(init)
= 25 °C; square wave - 5 A
[2] - 415 mW
[3] - 895 mW
P
tot
total power dissipation T
amb
≤ 25 °C
[1] - 1565 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1][2] - - 300 K/W
[1][3] - - 140 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1][4] - - 80 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
[5] - - 20 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[4] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[5] Soldering point of cathode tab.
